BFR183W

Low Noise Silicon Bipolar RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 2 mA to 30 mA fT = 8 GHz, NFmin = 0.9 dB at 900 MHz Pb-free (RoHS compliant) and halogen-free package with visible leads Qualification report according to AEC-Q101 available BFR183W 32 1 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFR183W Marking Pin Configuration RHs 1=B 2=E 3=C Package SOT323 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Value Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 56 °C Junction temperature Storage temperature VCEO VCES VCBO VEBO IC IB Ptot TJ TStg 12 20 20 2 65 5 450 150 -55 ... 150 Thermal Resistance Parameter Symbol Value Junction - soldering point2) RthJS 210 1TS is measured on the collector lead at the soldering point to the pcb 2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) Unit V mA mW °C Unit K/W 1 2014-04-03 BFR183W Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 15 mA, ...