BFR183TW

BFR183T/BFR183TW Vishay Telefunken Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications For low noise and high gain broadband amplifiers at collector currents from 2 mA to 30 mA. Features D Low noise figure D High power gain 1 1 13 581 94 9280 13 652 13 570 2 3 2 3 BFR183T Marking: RH Plastic case (SOT 23) 1 = Collector, 2 = Base, 3 = Emitter BFR183TW Marking: WRH Plastic case (SOT 323) 1 = Collector, 2 = Base, 3 = Emitter Absolute Maximum Ratings Tamb = 25_C, unless otherwise specified Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Total power dissipation Junction temperature Storage temperature range Test Conditions Symbol VCBO VCEO VEBO IC IB Ptot Tj Tstg Value 15 10 2 65 5 200 150 –65 to +150 Unit V V V mA mA mW °C °C Tamb ≤ 60 °C Maximum Thermal Resistance Tamb = 25_C, unless otherwise specified Parameter Test Conditions Junction ambient on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35mm Cu Symbol RthJA Value 450 Unit K/W Document Number 86026 Rev. 2, 20-Jan-99 www.vishay.de FaxBack +1-408-970-5600 1 (4) BFR183T/BFR183TW Vishay Telefunken Electrical DC Characteristics Tamb = 25_C, unless otherwise specified Parameter Collector cut-off current Collector-base cut-off current Emitter-base cut-off current Collector-emitter breakdown voltage Collector-emitter saturation voltage DC forward current transfer ratio Test Cond...