BFR181T
NPN Silicon RF Transistor Preliminary data
For low noise, high-gain broadband amplifiers at
3
collector curr...
BFR181T
NPN Silicon RF
Transistor Preliminary data
For low noise, high-gain broadband amplifiers at
3
collector currents from 0.5 mA to 12 mA
fT = 8 GHz
F = 1.45 dB at 900 MHz
2 1
VPS05996
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type BFR181T
Maximum Ratings Parameter
Marking RFs
1=B
Pin Configuration 2=E 3=C
Symbol VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg
Package SC75
Value 12 20 20 2 20 2 175 150 mW °C mA Unit V
Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation TS 79°C 1) Junction temperature Ambient temperature Storage temperature
-65 ... 150 -65 ... 150
Thermal Resistance Junction - soldering point 2) RthJS
405
K/W
1T is measured on the collector lead at the soldering point to the pcb S 2For calculation of R please refer to Application Note Thermal Resistance
thJA
1
Aug-09-2001
BFR181T
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter DC characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 5 mA, VCE = 8 V hFE 50 100 200 IEBO 1 µA ICBO 100 nA ICES 100 µA V(BR)CEO 12 V Symbol min. Values typ. max. Unit
2
Aug-09-2001
BFR181T
Electrical Characteristics at TA = 25°C, unless otherwise specified. Symbo...
