BFR181

Low Noise Silicon Bipolar RF Transistor For low noise, high-gain broadband amplifiers at collector currents from 0.5 mA to 12 mA fT = 8 GHz, NFmin = 0.9 dB at 900 MHz Pb-free (RoHS compliant) package Qualification report according to AEC-Q101 available BFR181 ESD (Electrostatic discharge) sensitive device, observe handling precaution! Type BFR181 Marking Pin Configuration RFs 1=B 2=E 3=C Package SOT23 Maximum Ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Value Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation1) TS ≤ 91 °C Junction temperature Ambient temperature VCEO VCES VCBO VEBO IC IB Ptot TJ TA 12 20 20 2 20 2 175 150 -65 ... 150 Storage temperature TStg -65 ... 150 Thermal Resistance Parameter Symbol Value Junction - soldering point2) RthJS 335 1TS is measured on the collector lead at the soldering point of the pcb 2For the definition of RthJS please refer to Application Note AN077 (Thermal Resistance Calculation) Unit V mA mW °C Unit K/W 1 2014-04-03 BFR181 Electrical Characteristics at TA = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. DC Characteristics Collector-emitter breakdown voltage IC = 1 mA, IB = 0 Collector-emitter cutoff current VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 5 mA, VCE = 8...