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BS616UV2011

Part Number	BS616UV2011
Manufacturer	Brilliance Semiconductor
Description	Ultra Low Power/Voltage CMOS SRAM 128K X 16 bit
Published	Mar 23, 2005
Detailed Description	BSI FEATURES Ultra Low Power/Voltage CMOS SRAM 128K X 16 bit DESCRIPTION BS616UV2011 • Ultra low operation voltag...
Datasheet	BS616UV2011 PDF File

Overview

BSI FEATURES Ultra Low Power/Voltage CMOS SRAM 128K X 16 bit DESCRIPTION BS616UV2011 • Ultra low operation voltage : 1.
8 ~ 3.
6V • Ultra low power consumption : Vcc = 2.
0 V C-grade: 15mA (Max.
) operating current I-grade: 20mA (Max.
) operating current 0.
08uA (Typ.
) CMOS standby current Vcc = 3.
0 V C-grade: 20mA (Max.
) operating current I -grade: 25mA (Max.
) operating current 0.
1uA (Typ.
) CMOS standby current • High speed access time : -70 70ns (Max.
) at Vcc = 2.
0V -10 100ns (Max.
) at Vcc = 2.
0V • Automatic power down when chip is deselected • Three state outputs and TTL compatible • Fully static operation • Data retention supply voltage as low as 1.
5V • Easy expansion with CE and OE opt...

Similar Datasheet

BS616UV2011 Ultra Low Power/Voltage CMOS SRAM 128K X 16 bit - Brilliance Semiconductor
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