BS616LV4015

BSI „ FEATURES Very Low Power/Voltage CMOS SRAM 256K X 16 bit „ DESCRIPTION BS616LV4015 Operation voltage : 4.5 ~ 5.5V Low power consumption : Vcc = 5.0V C-grade: 45mA (Max.) operating current I-grade: 50mA (Max.) operating current 1.5uA (Typ.) CMOS standby current High speed access time : -70 70ns (Max.) at Vcc = 5.0V -55 55ns (Max.) at Vcc = 5.0V Automatic power down when chip is deselected Three state outputs and TTL compatible Fully static operation Data retention supply voltage as low as 2V Easy expansion with CE and OE options I/O Configuration x8/x16 selectable by LB and UB pin The BS616LV4015 is a high performance, very low power CMOS Static Random Access Memory organized as 262,144 words by 16 bits and operates from a wide range of 4.5V to 5.5V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 1.5uA and maximum access time of 55ns in 5V operation. Easy memory expansion is provided by an active LOW chip enable(CE) and active LOW output enable(OE) and three-state output drivers. The BS616LV4015 has an automatic power down feature, reducing the power consumption significantly when chip is deselected. The BS616LV4015 is available in DICE form, JEDEC standard 44-pin TSOP Type II package and 48-pin BGA package. „ PRODUCT FAMILY PRODUCT FAMILY BS616LV4015DC BS616LV4015EC BS616LV4015BC BS616LV4015AC BS616LV4015DI BS616LV4015EI BS616LV4015BI BS616LV4015AI...