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BS616LV2025

Part Number	BS616LV2025
Manufacturer	Brilliance Semiconductor
Description	Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable
Published	Mar 23, 2005
Detailed Description	BSI FEATURES Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable DESCRIPTION BS616LV2025 • Very...
Datasheet	BS616LV2025 PDF File

Overview

BSI FEATURES Very Low Power/Voltage CMOS SRAM 128K x 16 or 256K x 8 bit switchable DESCRIPTION BS616LV2025 • Very low operation voltage : 4.
5 ~ 5.
5V • Very low power consumption : Vcc = 5.
0V C-grade: 40mA (Max.
) operating current I -grade: 45mA (Max.
) operating current 0.
6uA (Typ.
) CMOS standby current • High speed access time : -70 70ns (Max.
) at Vcc = 5.
0V -55 55ns (Max.
) at Vcc = 5.
0V • Automatic power down when chip is deselected • Three state outputs and TTL compatible • Fully static operation • Data retention supply voltage as low as 1.
5V • Easy expansion with CE1, CE2 and OE options • I/O Configuration x8/x16 selectable by CIO, LB and UB pin The BS616LV2025 is a high performan...

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