BS616LV2012

BSI Very Low Power/Voltage CMOS SRAM 128K X 16 bit BS616LV2012 „ FEATURES Very low operation voltage : 2.7 ~ 3.6V Very low power consumption : Vcc = 3.0V C-grade: 30mA (Max.) operating current I -grade: 35mA (Max.) operating current 0.15uA (Typ.) CMOS standby current High speed access time : -70 70ns (Max.) at Vcc = 3.0V -10 100ns (Max.) at Vcc = 3.0V Automatic power down when chip is deselected Three state outputs and TTL compatible Fully static operation Data retention supply voltage as low as 1.5V Easy expansion with CE and OE options I/O Configuration x8/x16 selectable by LB and UB pin „ DESCRIPTION The BS616LV2012 is a high performance, very low power CMOS Static Random Access Memory organized as 131,072 words by 16 bits and operates from a wide range of 2.7V to 3.6V supply voltage. Advanced CMOS technology and circuit techniques provide both high speed and low power features with a typical CMOS standby current of 0.15uA and maximum access ...