BS270

April 1995 BS270 N-Channel Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 500mA DC. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. Features 400mA, 60V. RDS(ON) = 2Ω @ VGS = 10V. High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capability. ________________________________________________________________________________ D G S Absolute Maximum Ratings Symbol VDSS VDGR VGSS Parameter Drain-Source Voltage T A = 25°C unless otherwise noted BS270 60 60 Units V V V Drain-Gate Voltage (RGS < 1MΩ) Gate-Source Voltage - Continuous - Non Repetitive (tp < 50µs) ±20 ±40 400 2000 625 5 -55 to 150 300 ID PD TJ,TSTG TL Drain Current - Continuous - Pulsed Maximum Power Dissipation Derate Above 25°C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purposes, 1/16" from Case for 10 Seconds mA mW mW/°C °C °C THERMAL CHARACTERISTICS RθJA Thermal Resistacne, Junction-to-Ambient 200 °C/W © 1997 Fairchild Semiconductor ...