BS250

DISCRETE SEMICONDUCTORS DATA SHEET BS250 P-channel enhancement mode vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use in relay, high-speed and line-transformer drivers. FEATURES Low RDS(on) Direct interface to C-MOS High-speed switching No second breakdown PINNING - TO-92 VARIANT 1 2 3 = source = gate = drain QUICK REFERENCE DATA Drain-source voltage Gate-source voltage (open drain) Drain current (DC) Total power dissipation up to Tamb = 25 °C Drain-source ON-resistance −ID = 200 mA; −VGS = 10 V Transfer admittance −ID = 200 mA; −VDS = 15 V  Yfs typ. RDS(on) typ. max. Ptot max. −VDS ±VGSO −ID max. max. max. BS250 45 V 20 V 0.25 A 0.83 W 9 Ω 14 Ω 125 mS PIN CONFIGURATION handbook, halfpage 1 d 2 3 g s MAM147 Note: Various pinout configurations available. Fig.1 Simplified outline and symbol. April 1995 2 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage Gate-source voltage (open drain) Drain current (DC) Drain current (peak value) Total power dissipation up to Tamb = 25 °C (note 1) Storage temperature range Junction temperature THERMAL RESISTANCE ...