BS209

BS209 DMOS Transistors (P-Channel) TO-92 .181 (4.6) min. .492 (12.5) .181 (4.6) .142 (3.6) FEATURES ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ High input impedance Low gate threshold voltage Low drain-source ON resistance High-speed switching No minority carrier storage time CMOS logic compatible input No thermal runaway No secondary breakdown max. ∅ .022 (0.55) .098 (2.5) D G S MECHANICAL DATA Case: TO-92 Plastic Package Weight: approx. 0.18 g Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage (pulsed) Drain Current (continuous) at Tamb = 25 °C Power Dissipation at Tamb = 25 °C Junction Temperature Storage Temperature Range 1) Value 400 400 ±20 120 8301) 150 –65 to +150 Unit V V V mA mW °C °C –VDSS –VDGS VGS –ID Ptot Tj TS Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case. Inverse Diode Symbol Max. Forward Current (continuous) at Tamb = 25 °C Forward Voltage Drop (typ.) at VGS = 0 V, IF = 400 mA, Tj = 25 °C IF VF Value 400 1.0 Unit mA V 4/98 BS209 ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Drain-Source Breakdown Voltage at –ID = 100 µA, VGS = 0 V Gate-Body Leakage Current, Forward at –VGSF = 20 V, VDS = 0 V Gate-Body Leakage Current, Reverse at –VGSR = 20 V, VDS = 0 V Drain Cutoff Current at –VDS = 400 V, VGS = 0 V Gate-Source Thre...