BS208

BS208 P–CHANNEL ENHANCEMENT MODE DMOS TRANSISTOR Features · · · · · High Breakdown Voltage High Input Impedance Fast Switching Speed Low Drain-Source On-Resistance Specially Suited for Telephone Subsets E A B TO-92 Dim A B C Min 4.45 4.46 12.7 0.41 3.43 2.42 1.14 Max 4.70 4.70 — 0.63 3.68 2.67 1.40 Mechanical Data · · · · Case: TO-92, Plastic Leads: Solderable per MIL-STD-202, Method 208 Pin Connections: See Diagram Weight: 0.18 grams (approx.) D BOTTOM VIEW C D E G H SG D All Dimensions in mm H G H Maximum Ratings Drain-Source-Voltage Drain-Gate-Voltage @ TA = 25°C unless otherwise specified Symbol -VDSS -VDGS VGS -ID Pd Tj, TSTG Value 240 200 ±20 200 830 –55 to +150 Unit V V V mA mW °C Characteristic Gate-Source-Voltage (pulsed) (Note 2) Drain-Current (continuous) Power Dissipation @TC = 25°C (Note 1) Operating and Storage Temperature Range Inverse Diode @ TA = 25°C unless otherwise specified Characteristic Symbol IF VF Value 0.22 0.85 Unit A V Maximum Forward Current (continuous) Forward Voltage Drop (Typical) @ VGS = 0, IF = 0.75A, Tj = 25°C Electrical Characteristics @ TA = 25°C unless otherwise specified Characteristic Drain-Source Breakdown Voltage Gate-Body Leakage Current Drain-Source Cutoff Current Gate-Source Threshold Voltage Drain-Source ON Resistance Thermal Resistance Junction to Ambient Input Capacitance Output Capacitance Feedback Capacitance Notes: Symbol -V(BR)DSS -IGSS -IDSS -IDSX -VGS(th) rDS(ON) RqJA Ciss Coss Crss Min 200 — — — — — — Typ ...