BS170L

N-Channel Enhancement-Mode MOS Transistor CORPORATION 2N7000 / BS170L DESCRIPTION The 2N7000 utilizes Calogic’s vertical DMOS technology. The device is well suited for switching applications where BV of 60V and low on resistance (under 5 ohms) are required. The 2N7000 is housed in a plastic TO-92 package. ORDERING INFORMATION Part 2N7000 BS170L X2N7000 Package Plastic TO-92 Plastic TO-92 Sorted Chips in Carriers Temperature Range -55oC to +150oC -55oC to +150oC -55oC to +150oC PIN CONFIGURATION 2N7000 3 1 SOURCE 2 GATE 3 DRAIN 2 1 2 BOTTOM VIEW 1 3 TO-92 (TO-226AA) BS170L 3 1 DRAIN 2 GATE 3 SOURCE 2 1 2 BOTTOM VIEW 3 1 3 1 2 CD5 PRODUCT SUMMARY V(BR)DSS (V) 60 60 rDS(ON) (Ω) 5 5 ID (A) 0.2 0.5 P/N 2N7000 BS170 2N7000 / BS170L CORPORATION ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) SYMBOL VDS VGS ID IDM PD TJ Tstg TL PARAMETERS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation1 Operating Junction Temperature Range Storage Temperature Range Lead Temperature (1/16" from case for 10 sec.) 1 LIMITS 60 ±40 0.2 0.13 0.5 0.4 0.16 -55 to 150 -55 to 150 300 UNITS V TEST CONDITIONS TA = 25oC A TA = 100 oC TA = 25oC TA = 100 oC W o C THERMAL RESISTANCE RATINGS SYMBOL RthJA NOTE: THERMAL RESISTANCE Junction-to-Ambient LIMITS 312.5 UNITS K/W 1. Pulse width limited by maximum junction temperature. SPECIFICATIONS1 SYMBOL STATIC V(BR)DSS VGS(th) IGSS IDSS ID(ON) rDS(ON) Drain-Source Breakdown Voltag...