BS170

BS170 N-CHANNEL ENHANCEMENT MODE TRANSISTOR Features · · · · High Input Impedance Fast Switching Speed CMOS Logic Compatible Input No Thermal Runaway or Secondary Breakdown E A B Dim A B C D E TO-92 Min 4.45 4.46 12.7 0.41 3.43 2.42 1.14 Max 4.70 4.70 — 0.63 3.68 2.67 1.40 Mechanical Data · · · · Case: TO-92, Plastic Leads: Solderable per MIL-STD-202, Method 208 Pin Connection: See Diagram Weight: 0.18 grams (approx.) D BOTTOM VIEW C G H SG D All Dimensions in mm H G H Maximum Ratings Drain-Source Voltage Drain-Gate Voltage @ TA = 25°C unless otherwise specified Characteristic Symbol VDSS VDGS VGS ID Pd Tj Tj, TSTG Value 60 60 ±20 300 830 150 -55 to +150 Unit V V V mA mW °C °C Gate-Source-Voltage (pulsed) Drain Current (continuous) Power Dissipation @TC = 25°C (Note 1) Junction Temperature Operating and Storage Temperature Range Inverse Diode @ TA = 25°C unless otherwise specified Characteristic Symbol IF VF Value 0.50 0.85 Unit A V Maximum Forward Current (continuous) Forward Voltage Drop (typ.) @ VGS = 0, IF = 0.5A, Tj = 25°C Electrical Characteristics Characteristic Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Current Drain-Cutoff Current Drain-Source ON Resistance @ TA = 25°C unless otherwise specified Symbol V(BR)DSS VGS(th) IGSS IDSS rDS (ON) RqJA gFS Ciss ton toff Min 60 0.8 — — — — — — — Typ 90 1.0 — — 3.5 — 200 60 5.0 15 Max — 3.0 10 0.5 5.0 150 — — — Unit V V nA µA W K/W mm pF ns Test Condition ID = 100µA, VGS = 0 VGS = VDS...