BS123

BS123 DMOS Transistors (N-Channel) TO-92 .181 (4.6) min. .492 (12.5) .181 (4.6) .142 (3.6) FEATURES ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ High input impedance Low gate threshold voltage Low drain-source ON resistance High-speed switching No minority carrier storage time CMOS logic compatible input No thermal runaway No secondary breakdown max. ∅ .022 (0.55) .098 (2.5) D G S MECHANICAL DATA Case: TO-92 Plastic Package Weight: approx. 0.18 g Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage (pulsed) Drain Current (continuous) at Tamb1) = 25 °C, at TSB2) = 50 °C Power Dissipation at Tamb1) = 25 °C, at TSB2) = 50 °C Junction Temperature Storage Temperature Range 1) Value 60 60 ±20 1.1 8301) 150 –65 to +150 Unit V V V A mW °C °C VDSS VDGS VGS ID Ptot Tj TS Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case (for TO-92). 4/98 BS123 ELECTRICAL CHARACTERISTICS Ratings at 25 °C ambient temperature unless otherwise specified Symbol Drain-Source Breakdown Voltage at ID = 100 µA, VGS = 0 V Gate-Body Leakage Current, Forward at VGSF = 20 V, VDS = 0 V Gate-Body Leakage Current, Reverse at VGSR = 20 V, VDS = 0 V Drain Cutoff Current at VDS = 60 V, VGS = 0 V Gate-Source Threshold Voltage at VGS = VDS, ID = 250 µA Drain-Source ON Resistance at VGS = 10 V, ID = 600 mA Capacitance at VDS = 25 V, VGS = ...