BS107P

N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 2 – SEPT 93 FEATURES * 200 Volt VDS * RDS(on)=23Ω BS107P D G S REFER TO BS107PT FOR GRAPHS E-Line TO92 Compatible SYMBOL VDS ID IDM VGS Ptot Tj:Tstg VALUE 200 0.12 2 ±20 500 -55 to +150 UNIT V A A V mW °C ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25°C Pulsed Drain Current Gate-Source Voltage Power Dissipation at Tamb =25°C Operating and Storage Temperature Range ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) PARAMETER Drain-Source Breakdown Voltage Gate Body Leakage Drain Cut-Off Current Drain Cut-Off Current Static Drain-Source on-State Resistance SYMBOL BVDSS IGSS IDSS IDSX RDS(on) 15 MIN. 200 TYP. 230 10 30 1 23 30 MAX. UNIT V nA nA µA Ω Ω CONDITIONS. ID=100µA, VGS=0V VGS=15V, VDS=0V VGS=0V, VDS=130V VGS=0.2V, VDS=70V VGS=2.6V, ID=25mA* VGS=5V, ID=100mA* * Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% 3-23 ...