BS107
N–CHANNEL ENHANCEMENT MODE TRANSISTOR Features
· · · · High Breakdown Voltage High Input Impedance Fast Switching ...
BS107
N–CHANNEL ENHANCEMENT MODE
TRANSISTOR Features
· · · · High Breakdown Voltage High Input Impedance Fast Switching Speed Specially Suited for Telephone Subsets
E
A
TO-92
B
Dim A B
Min 4.45 4.46 12.7 0.41 3.43 2.42 1.14
Max 4.70 4.70 — 0.63 3.68 2.67 1.40
Mechanical Data
· · · · Case: TO-92 Plastic Leads: Solderable per MIL-STD-202, Method 208 Pin Connections: See Diagram Weight: 0.18 grams (approx.)
@ TA = 25°C unless otherwise specified Symbol VDSS VDGS VGS ID Pd Tj, TSTG
D
BOTTOM VIEW
C
C D E G H
SG D
H
G
H
All Dimensions in mm
Maximum Ratings
Drain-Source-Voltage Drain-Gate-Voltage
Characteristic
Value 200 200 ±20 120 830 -55 to +150
Unit V V V mA mW °C
Gate-Source-Voltage (pulsed) (Note 2) Drain-Current (continuous) Power Dissipation @TC = 25°C (Note 1) Operating and Storage Temperature Range
Inverse Diode
@ TA = 25°C unless otherwise specified Characteristic Symbol IF VF @ TA = 25°C unless otherwise specified Symbol V(BR)DSS IGSS IDSS IDSX VGS(th) rDS(ON) RqJA Ciss Coss Crss ton toff Min 200 — — — — — — — Typ 230 — — 1.8 18 — 58 8.0 1.5 5.0 15 Max — 10 30 1.0 3 28 150 — — Unit V nA nA µA V W K/W pF ns Test Condition ID = 100µA, VGS = 0 VGS = 15V, VDS = 0 VDS =130V, VGS = 0 VDS = 70V, VGS = 0.2V VGS = VDS, ID = 1.0mA VGS = 2.8V, ID = 20 mA (Note 1) VDS = 20V, VGS = 0,f =1.0MHz VGS = 10V, VDS = 10V, RD = 100W Value 0.5 0.85 Unit A V
Maximum Forward Current (continuous) Forward Voltage Drop (typical) @ VGS = 0, IF = 0.5A, Tj = 25°C
Electrical Chara...