DatasheetsPDF.com

BS107

Diodes Incorporated

N-CHANNEL ENHANCEMENT MODE TRANSISTOR

BS107 N–CHANNEL ENHANCEMENT MODE TRANSISTOR Features · · · · High Breakdown Voltage High Input Impedance Fast Switching ...


Diodes Incorporated

BS107

File Download Download BS107 Datasheet


Description
BS107 N–CHANNEL ENHANCEMENT MODE TRANSISTOR Features · · · · High Breakdown Voltage High Input Impedance Fast Switching Speed Specially Suited for Telephone Subsets E A TO-92 B Dim A B Min 4.45 4.46 12.7 0.41 3.43 2.42 1.14 Max 4.70 4.70 — 0.63 3.68 2.67 1.40 Mechanical Data · · · · Case: TO-92 Plastic Leads: Solderable per MIL-STD-202, Method 208 Pin Connections: See Diagram Weight: 0.18 grams (approx.) @ TA = 25°C unless otherwise specified Symbol VDSS VDGS VGS ID Pd Tj, TSTG D BOTTOM VIEW C C D E G H SG D H G H All Dimensions in mm Maximum Ratings Drain-Source-Voltage Drain-Gate-Voltage Characteristic Value 200 200 ±20 120 830 -55 to +150 Unit V V V mA mW °C Gate-Source-Voltage (pulsed) (Note 2) Drain-Current (continuous) Power Dissipation @TC = 25°C (Note 1) Operating and Storage Temperature Range Inverse Diode @ TA = 25°C unless otherwise specified Characteristic Symbol IF VF @ TA = 25°C unless otherwise specified Symbol V(BR)DSS IGSS IDSS IDSX VGS(th) rDS(ON) RqJA Ciss Coss Crss ton toff Min 200 — — — — — — — Typ 230 — — 1.8 18 — 58 8.0 1.5 5.0 15 Max — 10 30 1.0 3 28 150 — — Unit V nA nA µA V W K/W pF ns Test Condition ID = 100µA, VGS = 0 VGS = 15V, VDS = 0 VDS =130V, VGS = 0 VDS = 70V, VGS = 0.2V VGS = VDS, ID = 1.0mA VGS = 2.8V, ID = 20 mA (Note 1) VDS = 20V, VGS = 0,f =1.0MHz VGS = 10V, VDS = 10V, RD = 100W Value 0.5 0.85 Unit A V Maximum Forward Current (continuous) Forward Voltage Drop (typical) @ VGS = 0, IF = 0.5A, Tj = 25°C Electrical Chara...




Similar Datasheet




@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)