BS107

MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by BS107/D TMOS Switching N–Channel — Enhancement 2 GATE 1 DRAIN BS107 BS107A ® 3 SOURCE MAXIMUM RATINGS Rating Drain – Source Voltage Gate–Source Voltage — Continuous — Non–repetitive (tp ≤ 50 µs) Drain Current Continuous(1) Pulsed(2) Total Device Dissipation @ TA = 25°C Derate above 25°C Operating and Storage Junction Temperature Range Symbol VDS VGS VGSM ID IDM PD TJ, Tstg Value 200 ± 20 ± 30 250 500 350 – 55 to 150 mW °C Unit Vdc Vdc Vpk mAdc 1 2 3 CASE 29–04, STYLE 30 TO–92 (TO–226AA) ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS Zero–Gate–Voltage Drain Current (VDS = 130 Vdc, VGS = 0) Drain–Source Breakdown Voltage (VGS = 0, ID = 100 µAdc) Gate Reverse Current (VGS = 15 Vdc, VDS = 0) IDSS V(BR)DSX IGSS VGS(Th) rDS(on) — — — — — — 4.5 4.8 28 14 6.0 6.4 — 200 — — — 0.01 30 — 10 nAdc Vdc nAdc ON CHARACTERISTICS(2) Gate Threshold Voltage (ID = 1.0 mAdc, VDS = VGS) Static Drain–Source On Resistance BS107 (VGS = 2.6 Vdc, ID = 20 mAdc) (VGS = 10 Vdc, ID = 200 mAdc) BS107A (VGS = 10 Vdc) (ID = 100 mAdc) (ID = 250 mAdc) 1.0 — 3.0 Vdc Ohms SMALL– SIGNAL CHARACTERISTICS Input Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Reverse Transfer Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Output Capacitance (VDS = 25 Vdc, VGS = 0, f = 1.0 MHz) Forward Transconductance (VDS = 25 Vdc, ID = 250 mAdc) Ciss Crss Coss gfs — — — 200 60 6.0 30 4...