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SMD Type
Schottky Diodes 1N5817W ~ 1N5819W
TransDisiotodress
Ƶ Features
ƽ Low power loss, high efficiency ƽ High current capability ƽ Low forward voltage drop ƽ High Surge Capability
SOD-123F
1
2
Top View
PIN DESCRIPTION PIN DESCRIPTION
1 Cathode 2 Anode
Ƶ Absolute Maximum Ratings Ta = 25ć
Parameter Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage Forward Voltage @ IF=1A Forward Voltage @ IF=3.1A Average Forward Rectified Current @ TL=90ć Non-Repetitive Peak Forward Surge Current @8.3ms
Reverse Voltage Leakage Current
Typical Junction Capacitance Junction Temperature Storage Temperature range
Ta = 25ć Ta = 100ć
Symbol VRRM VRMS VDC
VF
IFAV IFSM
IR
CJ TJ Tstg
1N5817W 20 14 20 0.45 0.75
1N5818W 30 21 30 0.55
0.875 1 25 1 10
110 125 -55 to 125
1N5819W 40 28 40 0.6 0.9
Unit
V
A mA pF ć
Ƶ Marking
NO. Marking
1N5817W 12A
1N5818W 13A
1N5819W 14A
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SMD Type
TransDisiotodress
Average Forward Current (A)
Schottky Diodes 1N5817W .