BRS212-240

Philips Semiconductors Product specification Breakover diodes BRS212 series GENERAL DESCRIPTION A range of bidirectional, breakover diodes in a two terminal, surface mounting, plastic envelope. These devices feature controlled breakover voltage and high holding current together with high peak current handling capability. Their intended application is protection of line based telecommunications equipment against voltage transients. QUICK REFERENCE DATA SYMBOL V(BO) PARAMETER Breakover voltage BRS212-140 BRS212-160 BRS212-180 BRS212-200 BRS212-220 BRS212-240 BRS212-260 BRS212-280 Holding current Non-repetitive peak pulse current (CCITT K17) MIN. 150 TYP. 140 160 180 200 220 240 260 280 MAX. 40 UNIT V V V V V V V V mA A IH IPP OUTLINE - SOD106 date code XXX denotes voltage grade SYMBOL YM 212 XXX LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VD PARAMETER Continuous voltage CONDITIONS BRS212-140 BRS212-160 BRS212-180 BRS212-200 BRS212-220 BRS212-240 BRS212-260 BRS212-280 5/310 µs impulse equivalent to 10/700 µs, 1.6 kV voltage impulse (CCITT K17) half sine wave; t = 10 ms; Tj = 70 ˚C prior to surge tp = 10 ms tp = 10 µs MIN. - 40 MAX. 105 120 135 150 165 180 195 210 40 15 1.1 50 4 50 150 150 260 UNIT V V V V V V V V A A A2s A/µs W W ˚C ˚C ˚C IPP ITSM I2t dIT/dt Ptot PTM Tstg Tj TL Non-repetitive peak pulse current Non repetitive surge peak on-state current I2t for fusing Rate of rise of on-state current after V(BO) t...