4/096-Bit Serial Electrically Erasable PROM
Memory ICs
4,096-Bit Serial Electrically Erasable PROM
BR93LC66 / BR93LC66F / BR93LC66RF / BR93LC66FV
Features • • Low ...
Description
Memory ICs
4,096-Bit Serial Electrically Erasable PROM
BR93LC66 / BR93LC66F / BR93LC66RF / BR93LC66FV
Features Low power CMOS Technology 256 × 16 bit configuration 2.7V to 5.5V operation Low power dissipation – 3mA (max.) active current: 5V – 5µA (max.) standby current: 5V Auto increment for efficient data bump Automatic erase-before-write Hardware and software write protection – Default to write-disable state at power up – Software instructions for write-enable / disable – Vcc lockout inadvertent write protection 8-pin SOP / 8-pin SSOP-B / 8-pin DIP packages Device status signal during write cycle TTL compatible Input / Output 100,000 ERASE / write cycles 10 years Data Retention
Pin assignments
CS SK DI 1 2 3 8 7 6 5 VCC N.C. N.C. GND NC 1 VCC 2 CS 3 SK 4 8 7 N.C. GND DO DI
BR93LC66 / BR93LC66RF
BR93LC66F / BR93LC66FV
6 5
DO 4
Pin descriptions
Pin Name CS SK DI DO GND N.C. N.C. VCC Chip select input Serial clock input Start bit, operating code, address, and serial data input Serial data output, READY / BUSY internal status display output Ground Not connected Not connected Power supply Function
Overview The BR93LC66 series are CMOS serial input / output-type memory circuits (EEPROMs) that can be programmed electrically. Each is configured of 256 words × 16 bits (4096 bits), and each word can be accessed individually and data read from it and written to it. Operation control is performed using five types of commands. The commands, addresse...
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