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BR610

EIC discrete Semiconductors

SILICON BRIDGE RECTIFIERS

www.eicsemi.com TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 BR600 - BR610 SILICON BRIDGE RECTIFIERS PRV : 50 - ...


EIC discrete Semiconductors

BR610

File Download Download BR610 Datasheet


Description
www.eicsemi.com TH97/2478 TH09/2479 IATF 0113686 SGS TH07/1033 BR600 - BR610 SILICON BRIDGE RECTIFIERS PRV : 50 - 1000 Volts BR6 Io : 6.0 Amperes FEATURES : * High current capability * High surge current capability * High reliability * Low reverse current * Low forward voltage drop * Ideal for printed circuit board * Pb / RoHS Free MECHANICAL DATA : * Case : Reliable low cost construction utilizing molded plastic technique * Epoxy : UL94V-O rate flame retardant * Lead : Axial lead solderable per MIL - STD 202 , Method 208 guaranteed * Polarity : Polarity symbols marked on case * Mounting position : Any * Weight : 3.6 grams 0.158 (4.00) 0.142 (3.60) 0.445 (11.30) 0.405 (10.30) AC 0.127 (3.20) 0.047 (1.20) AC 0.62 (15.75) 0.58 (14.73) 0.042 (1.06) 0.038 (0.96) 0.27 (6.9) 0.23 (5.8) 0.75 (19.1) Min. Dimensions in inches and ( millimeters ) MAXIMUM RATINGS AND ELECTRICAL Rating at 25 °C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. CHARACTERISTICS RATING SYMBOL BR600 BR601 BR602 BR604 BR606 BR608 BR610 UNIT Maximum Recurrent Peak Reverse Voltage VRRM 50 100 200 400 600 800 1000 V Maximum RMS Voltage VRMS 35 70 140 280 420 560 700 V Maximum DC Blocking Voltage VDC 50 100 200 400 600 800 1000 V Maximum Average Forward Current Tc=50°C IF(AV) 6.0 A Peak Forward Surge Current, Single half sine wave Superimposed IFSM 200 A on rated load (JEDEC ...




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