Document
www.eicsemi.com
TH97/2478
TH09/2479
IATF 0113686 SGS TH07/1033
BR5000 - BR5010
SILICON BRIDGE RECTIFIERS
PRV : 50 - 1000 Volts
Io : 50 Amperes
FEATURES :
* High case dielectric strength * High surge current capability * High reliability * High efficiency * Low reverse current * Low forward voltage drop * Rated isolation-voltage 2000 VAC * Pb / RoHS Free
MECHANICAL DATA :
* Case : Molded plastic with heatsink integrally mounted in the bridge encapsulation
* Epoxy : UL94V-0 rate flame retardant * Terminals : plated .25" (6.35 mm). Faston * Polarity : Polarity symbols marked on case * Mounting position : Bolt down on heat-sink with
silicone thermal compound between bridge and mounting surface for maximum heat transfer efficiency. * Weight : 17.1 grams
BR50
0.728(18.50) 0.688(17.40)
0.570(14.50) 0.530(13.40)
0.685(16.70) 1.137(28.90) 0.618(15.70) 1.114(28.30)
0.658(16.70) 0.618(15.70)
0.210(5.30) 0.200(5.10)
0.032(0.81) 0.028(0.71)
0.310(7.87) 0.280(7.11)
0.252(6.40) 0.248(6.30)
φ 0.100(2.50) 0.090(2.30)
0.905(23.0) 0.826(21.0)
Metal Heatsink
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current Tc = 55°C
Peak Forward Surge Current Single half sine wave
Superimposed on rated load (JEDEC Method)
Current Squared Time at t < 8.3 ms.
Maximum Forward Voltage per Diode at IF=25 A
Maximum DC Reverse Current
Ta = 25 °C
at Rated DC Blocking Voltage
Ta = 100 °C
Typical Thermal Resistance (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
SYMBOL BR5000 BR5001 BR5002 BR5004 BR5006 BR5008 BR5010 UNIT
VRRM
50
100
200
400
600
800
1000
V
VRMS
35
70
140
280
420
560
700
V
VDC
50
100
200
400
600
800
1000
V
IF(AV)
50
A
IFSM
500
A
I2t VF IR IR(H) RθJC TJ TSTG
660 1.1 10 200 1 - 40 to + 150 - 40 to + 150
A2S V μA μA °C/W °C °C
Notes : 1 ) Thermal resistance from Junction to Case with units mounted on a 9"x5"x4.6" (22.9x12.7x11.7 cm) Al-Finned Heatsink.
Page 1 of 2
Rev. 04 : May 6, 2013
www.eicsemi.com
TH97/2478
TH09/2479
IATF 0113686 SGS TH07/1033
RATING AND CHARACTERISTIC CURVES (BR5000 - BR5010 )
AVERAGE FORWARD OUTPUT CURRENT AMPERES
FIG.1 - DERATING CURVE FOR OUTPUT RECTIFIED CURRENT
60
HEAT-SINK MOUNTING, Tc
9" x 5" x 4.6" THK.
50
5 (22.9 x 12.7 x5 11.7cm5)
Al.-Finned .
40
30
20
10
0
0
25 50 75 100 125 150 175
CASE TEMPERATURE, ( °C)
PEAK FORWARD SURGE CURRENT, AMPERES
FIG.2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT
600
500
400
TJ = 50 °C
300
200
100
8.3 ms SINGLE HALF SINE WAVE JEDEC METHOD
0
1
2
4 6 10
20
40 60 100
NUMBER OF CYCLES AT 60Hz
FORWARD CURRENT, AMPERES
FIG.3 - TYPICAL FORWARD CHARACTERISTICS PER DIODE
100
10 Pulse Width = 300 μs 1 % Duty Cycle
1.0
TJ = 25 °C 0.1
0.01 0.4
0.6 0.8 1.0 1.2 1.4 1.6 1.8
FORWARD VOLTAGE, VOLTS
REVERSE CURRENT, MICROAMPERES
FIG.4 - TYPICAL REVERSE CHARACTERISTICS PER DIODE
10 TJ = 100 °C
1.0
0.1
TJ = 25 °C
0.01 0
20 40
60
80
100 120 140
PERCENT OF RATED REVERSE VOLTAGE, (%)
Page 2 of 2
Rev. 04 : May 6, 2013
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