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RD2.2E Dataheets PDF



Part Number RD2.2E
Manufacturers Excel Semiconductor
Logo Excel Semiconductor
Description Zener diode
Datasheet RD2.2E DatasheetRD2.2E Datasheet (PDF)

RD2.0E~RD39E Zener diode Features 1. DO-35 Glass sealed package 2. Planar process 3. Vz applied E24 standard Applications Circuits for constant voltage, constant current, waveform clipper, surge absorber, etc. Absolute Maximum Ratings Tj=25℃ Parameter Symbol Value Unit Forward Current If 150 mA Power Dissipation PV 400 mW Surge Reverse Power PRSM 100 W Junction Temperature Tj 175 ℃ Storage Temperature Tstg -65~+175 ℃ Stresses exceeding maximum ratings may damage the device. .

  RD2.2E   RD2.2E


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RD2.0E~RD39E Zener diode Features 1. DO-35 Glass sealed package 2. Planar process 3. Vz applied E24 standard Applications Circuits for constant voltage, constant current, waveform clipper, surge absorber, etc. Absolute Maximum Ratings Tj=25℃ Parameter Symbol Value Unit Forward Current If 150 mA Power Dissipation PV 400 mW Surge Reverse Power PRSM 100 W Junction Temperature Tj 175 ℃ Storage Temperature Tstg -65~+175 ℃ Stresses exceeding maximum ratings may damage the device. Maximum ratings are stress ratings only. Functional operation above the recommended operating conditions is not implied. Extended exposure to stresses above the recommended operating conditions may affect device reliability. www.excel-semi.com FaxBack +86-512-66607370 Excel Semiconductor Rev. 3e, 1-Nov-2006 1/5 RD2.0E~RD39E Electrical Characteristics Tj=25℃ Type Number Suffix Zener voltage Vz (V) Dynamic Impedance Zzt (Ω) Min. Max. Iz (mA) Max. Iz (mA) - 1.88 2.24 RD 2.0 E.


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