BR211SM

Philips Semiconductors Preliminary specification Breakover diodes BR211SM series GENERAL DESCRIPTION A range of bidirectional, breakover diodes in a two terminal, surface mounting, plastic envelope. These devices feature controlled breakover voltage and high holding current together with high peak current handling capability. Typical application is transient overvoltage protection in telecommunications equipment. QUICK REFERENCE DATA SYMBOL V(BO) IH ITSM PARAMETER BR211SM-140 to BR211SM-280 Breakover voltage Holding current Non-repetitive peak current MIN. 140 150 MAX. 280 40 UNIT V mA A OUTLINE - SOD106 SYMBOL LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VD ITSM1 ITSM2 I2t dIT/dt Ptot PTM Tstg Ta Tvj PARAMETER Continuous voltage Non repetitive peak current Non repetitive on-state current I2t for fusing Rate of rise of on-state current after V(BO) turn-on Continuous dissipation Peak dissipation Storage temperature Operating ambient temperature Overload junction temperature 10/320 µs impulse equivalent to 10/700 µs, 1.6 kV voltage impulse (CCITT K17) half sine wave; t = 10 ms; Tj = 70 ˚C prior to surge tp = 10 ms tp = 10 µs Ta = 25˚C tp = 1 ms; Ta = 25˚C off-state on-state CONDITIONS MIN. - 40 MAX. 75% of V(BO)typ 40 15 1.1 50 1.2 50 150 70 150 UNIT V A A A2s A/µs W W ˚C ˚C ˚C THERMAL RESISTANCES SYMBOL Rth j-sp Rth j-a Zth j-a PARAMETER Thermal resistance junction to solder point Thermal resistance junction to ambie...