o !iupertex inc.
VP05D
Ordering Information
BVoss '
BVOGS -350V -400V
ROS(ON)
(max)
750
750
P-Channel Enhancement-M...
o !iupertex inc.
VP05D
Ordering Information
BVoss '
BVOGS -350V -400V
ROS(ON)
(max)
750
750
P-Channel Enhancement-Mode Vertical DMOS Power FETs
IO(ON)
(min)
-200m A
-200mA
TO·39
Order Number' Package TO·92
VP0535N2
VP0535N3
VP0540N2
VP0540N3
DICE VP0535ND VP0540ND
Features
o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low CISS and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Channel devices
Advanced DMOS Technology
These enhancement-mode (normally-off) power
transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process. This combination produces devices with the power handling capabilities of bipolar
transistors and with the high input impedance and negative temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runawa...