M29W640FB

64Mb: 3V Embedded Parallel NOR Flash Features Parallel NOR Flash Embedded Memory M29W640FT, M29W640FB Features Supply voltage – VCC = 2.7–3.6V (program, erase, read) – VPP = 12V for fast program (optional) Asynchronous random/page read – Page width: 4 words – Page access: 25ns – Random access: 60ns, 70ns Program time – 10µs per byte/word TYP – 4 words/8 bytes program Memory organization – 135 memory blocks – 1 boot block and 7 parameter blocks, 8KB each (top or bottom) – 127 main blocks, 64KB each Program/erase controller – Embedded byte/word program algorithms Program/erase suspend and resume – Read from any block during a PROGRAM SUSPEND operation – Read or program another block during an ERASE SUSPEND operation UNLOCK BYPASS PROGRAM command – Faster production/batch programming VPP/WP# pin for fast program and write protect Temporary block unprotection mode Common Flash interface – 64-bit security code Ex...