STU/D432LGreen
Product
Sa mHop Microelectronics C orp.
N-Channel Logic Enhancement Mode Field Effect Transistor
Ver 1....
STU/D432LGreen
Product
Sa mHop Microelectronics C orp.
N-Channel Logic Enhancement Mode Field Effect
Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
10 @ VGS=10V 40V 42A
15 @ VGS=4.5V
FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-252 and TO251 Package.
G S
STU SERIES TO - 252AA( D- PAK )
G DS
STD SERIES TO - 251( I - PAK )
ABSOLUTE MAXIMUM RATINGS (TC=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage
VGS Gate-Source Voltage
ID
Drain Current-Continuous a
TC=25°C TC=70°C
IDM -Pulsed b
EAS Single Pulse Avalanche Energy d
PD
Maximum Power Dissipation a
TC=25°C TC=70°C
TJ, TSTG
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
R JC
Thermal Resistance, Junction-to-Case a
R JA
Thermal Resistance, Junction-to-Ambient a
Limit 40 ±20 42 34 123 121 42 27
-55 to 150
3 50
Units V V A A A mJ W W °C
°C/W °C/W
Details are subject to change without notice.
1
Oct,12,2011
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