STF8235AGreen
Product
Sa mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
Ver 1.0
...
STF8235AGreen
Product
Sa mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect
Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS 20V
ID RDS(ON) (mΩ) Max
6.9 @ VGS=4.5V 7.0 @ VGS=4.0V 11A 7.2 @ VGS=3.7V 7.6 @ VGS=3.1V 8.5 @ VGS=2.5V
FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. ESD Protected.
G1 S1 S1
PIN 1
D1/D2 (Bottom view)
G2 S2 S2
TDFN 2X5
G1 3 S1 2 S1 1
Bottom Drain Contact
4 G2 5 S2 6 S2
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol VDS VGS
ID
IDM
Parameter Drain-Source Voltage Gate-Source Voltage
Drain Current-Continuous c
-Pulsed a c
TA=25°C TA=70°C
PD
Maximum Power Dissipation
TA=25°C TA=70°C
TJ, TSTG
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
Limit 20 ±12 11 8.8 53
1.67 1.07
-55 to 150
75
Units V V A A A W W
°C
°C/W
Details are subject to change without notice.
1
Jul,08,2015
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