STC9204Green
Product
Sa mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
Ver 1.1
...
STC9204Green
Product
Sa mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect
Transistor
Ver 1.1
PRODUCT SUMMARY
VDSS 20V
ID 9.5A
RDS(ON) (mΩ) Max
10.0 @ VGS=4.5V 10.3 @ VGS=4.0V 10.6 @ VGS=3.7V 11.8 @ VGS=3.1V 14.2 @ VGS=2.5V
FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. ESD Protected.
G1
S1
PIN 1
S1
D1/D2
G2 S2 S2
TDFN 2X3 (Bottom view)
Bottom Drain Contact (D1/D2)
G1 3
4 G2
S1 2 S1 1
5 S2 6 S2
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol Parameter
VDS Drain-Source Voltage VGS Gate-Source Voltage ID Drain Current-Continuous a
IDM -Pulsed b
TA=25°C TA=70°C
PD
Maximum Power Dissipation a
TA=25°C TA=70°C
TJ, TSTG
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient a
Limit 20 ±12 9.5 7.6 60 1.56 1.00
-55 to 150
80
Units V V A A A W W
°C
°C/W
Details are subject to change without notice.
1
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