STC8697Green
Product
Sa mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
Ver 1.2
...
STC8697Green
Product
Sa mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect
Transistor
Ver 1.2
PRODUCT SUMMARY
VDSS
ID RDS(ON) (mΩ) Max
9.8 @ VGS=4.0V 20V 10A 10.5 @ VGS=3.8V
15.0 @ VGS=2.5V
FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. ESD Protected.
S mini 8
PIN 1
D2 5 D2 6 D1 7 D1 8
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol VDS VGS
ID
IDM
Parameter Drain-Source Voltage Gate-Source Voltage
Drain Current-Continuous a
-Pulsed b
TA=25°C TA=70°C
EAS Single Pulse Avalanche Energy d
PD
Maximum Power Dissipation a
TA=25°C TA=70°C
TJ, TSTG
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient a
4 G2 3 S2 2 G1 1 S1
Limit 20 ±12 10 8 60 56 1.32 0.84
-55 to 150
95
Units V V A A A mJ W W
°C
°C/W
Details are subject to change without notice.
1
Dec,08,2015
www.samhop.com.tw
STC8697
Ver 1.2
ELECTRICA...
