GE28F128W30

Intel® Wireless Flash Memory (W30) 28F640W30, 28F320W30, 28F128W30 Datasheet Product Features ■ High Performance Read-While-Write/Erase — Burst Frequency at 40 MHz — 70 ns Initial Access Speed — 25 ns Page-Mode Read Speed — 20 ns Burst-Mode Read Speed — Burst and Page Mode in All Blocks and across All Partition Boundaries — Burst Suspend Feature — Enhanced Factory Programming: 3.5 µs per Word Program Time — Programmable WAIT Signal Polarity ■ Flash Power — VCC = 1.70 V – 1.90 V — VCCQ = 2.20 V – 3.30 V — Standby Current (0.13 µm) = 8 µA (typ.) — Read Current = 7 mA (4 word burst, typ.) ■ Flash Software — 5 µs/9 µs (typ.) Program/Erase Suspend Latency Time — Intel® Flash Data Integrator (FDI) and Common Flash Interface (CFI) Compatible ■ Quality and Reliability — Operating Temperature: –40 °C to +85 °C — 100K Minimum Erase Cycles — 0.13 µm ETOX™ VIII Process — 0.18 µm ETOX™ VII Process ■ Flash Architecture — Multiple...