M29W400FB

M29W800FT M29W400FT M29W800FB M29W400FB 8-Mbit (1 Mbit×8 / 512 Kbit×16); 4-Mbit (512 Kbit×8 / 256 Kbit×16) Boot Block 3 V Supply Flash memory Features „ Supply voltage – VCC = 2.7 V to 3.6 V for program, erase and read „ Access time: 55 ns, 70 ns „ Programming time – 10 µs per byte/word typical „ 19 memory blocks (M29W800F) – 1 boot block (top or bottom location) – 3 parameter blocks – 15 main blocks „ 11 memory blocks (M29W400F) – 1 boot block (top or bottom location) – 3 parameter blocks – 7 main blocks „ Program/erase controller – Embedded byte/word program algorithms „ Erase suspend and resume modes – Read and program another block during erase suspend „ Unlock bypass program command – Faster production/batch programming „ Temporary block unprotection mode „ Common Flash interface – 64-bit security code „ Low power consumption – Standby and automatic standby „ 100,000 program/erase cycles per block „ Electronic signature – Manufacturer...