R9523

o §upertexinc. P-Channel Enhancement-Mode Vertical DMOS Power FETs IIRRF~95~2m2 R9523 Objective Ordering Information BVoss I ROS(ON) BVOGS (max) -100V o.sn -60V o.sn 'O(ON) (min) -5A -5A Order Number I Package 10-220 10-92 IRF9522 R9522 IRF9523 R9523 Features o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low CISS and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Channel devices Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and negative temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermallyin...