VN2010L

"!!iupertexinc. VN2010L N-Channel Enhancement-Mode Vertical DMOS Power FETs Preliminary Ordering Information BVoss / BVOGS 200V ROS(ON) (max) 10n VGS(th) (max) 1.5V Order Number / Package T()"92 VN2010L Features o Freedom from secondary breakdown o Low power drive requirement o Ease of paralleling o Low Crss and fast switching speeds o Excellent thermal stability o Integral Source-Drain diode o High input impedance and high gain o Complementary N- and P-Channel devices Advanced DMOS Technology These enhancement-mode (normally-off) power transistors utilize a vertical DMOS structure and Supertex's well-proven silicongate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and negative temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, these devices are free from thermal runaway and thermallyinduced secondary breakdown. Supertex Vertical DMOS Po...