Document
Philips Semiconductors
Product specification
Triacs sensitive gate
GENERAL DESCRIPTION
Glass passivated, sensitive gate triacs in a plastic envelope suitable for surface mounting, intended for use in general purpose bidirectional switching and phase control applications, where high sensitivity is required in all four quadrants.
BT138B series E
QUICK REFERENCE DATA
SYMBOL VDRM IT(RMS) ITSM PARAMETER BT138BRepetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current MAX. MAX. MAX. UNIT 500E 500 12 95 600E 600 12 95 800E 800 12 95 V A A
PINNING - SOT404
PIN 1 2 3 mb DESCRIPTION main terminal 1 main terminal 2 gate main terminal 2
PIN CONFIGURATION
mb
SYMBOL
T2
2 1 3
T1
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VDRM IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current I2t for fusing Repetitive rate of rise of on-state current after triggering full sine wave; Tmb ≤ 99 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/µs T2+ G+ T2+ GT2- GT2- G+ CONDITIONS MIN. -40 -500 5001 MAX. -600 6001 12 95 105 45 50 50 50 10 2 5 5 0.5 150 125 -800 800 UNIT V A A A A2s A/µs A/µs A/µs A/µs A V W W ˚C ˚C
I2t dIT/dt
IGM VGM PGM PG(AV) Tstg Tj
Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature
over any 20 ms period
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/µs. October 1997 1 Rev 1.200
Philips Semiconductors
Product specification
Triacs sensitive gate
THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER CONDITIONS MIN. -
BT138B series E
TYP. 55
MAX. 1.5 2.0 -
UNIT K/W K/W K/W
Thermal resistance full cycle junction to mounting base half cycle Thermal resistance minimum footprint, FR4 board junction to ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated SYMBOL IGT PARAMETER Gate trigger current CONDITIONS VD = 12 V; IT = 0.1 A T2+ G+ T2+ GT2- GT2- G+ T2+ G+ T2+ GT2- GT2- G+ MIN. 0.25 TYP. 2.5 4.0 5.0 11 3.2 16 4.0 5.5 4.0 1.4 0.7 0.4 0.1 MAX. 10 10 10 25 30 40 30 40 30 1.65 1.5 0.5 UNIT mA mA mA mA mA mA mA mA mA V V V mA
IL
Latching current
VD = 12 V; IGT = 0.1 A
IH VT VGT ID
Holding current On-state voltage Gate trigger voltage Off-state leakage current
VD = 12 V; IGT = 0.1 A IT = 15 A VD = 12 V; IT = 0.1 A VD = 400 V; IT = 0.1 A; Tj = 125 ˚C VD = VDRM(max); Tj = 125 ˚C
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated SYMBOL dVD/dt tgt PARAMETER Critical rate of rise of off-state voltage Gate controlled turn-on time CONDITIONS VDM = 67% VDRM(max); Tj = 125 ˚C; exponential waveform; gate open circuit ITM = 16 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/µs MIN. TYP. 50 2 MAX. UNIT V/µs µs
October 1997
2
Rev 1.200
Philips Semiconductors
Product specification
Triacs sensitive gate
BT138B series E
20
Ptot / W
BT138
Tmb(max) / C 95 = 180
15
IT(RMS) / A
BT138
15
1
120 90 60
99 C
102.5
10
110
10
30
5
5 117.5
0
0
5 IT(RMS) / A
10
125 15
0 -50
0
50 Tmb / C
100
150
Fig.1. Maximum on-state dissipation, Ptot, versus rms on-state current, IT(RMS), where α = conduction angle.
BT138
Fig.4. Maximum permissible rms current IT(RMS) , versus mounting base temperature Tmb.
1000
ITSM / A
25
IT(RMS) / A
BT138
20
15
100 dI T /dt limit T2- G+ quadrant IT T 10 10us I TSM time
10
5
Tj initial = 25 C max 100us 1ms T/s 10ms 100ms
0 0.01
0.1 1 surge duration / s
10
Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp ≤ 20ms.
ITSM / A BT138 IT 80 T ITSM time
Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Tmb ≤ 99˚C.
VGT(Tj) VGT(25 C)
100
1.6 1.4 1.2 1
BT136
Tj initial = 25 C max 60
40
0.8
20
0.6 0.4 -50
0
1
10 100 Number of cycles at 50Hz
1000
0
50 Tj / C
100
150
Fig.3. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz.
Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
October 1997
3
Rev 1.200
Philips Semiconductors
Product specification
Triacs sensitive gate
BT138B series E
3 2.5 2 1.5 1
IGT(Tj) IGT(25 C)
BT138E T2+ G+ T2+ GT2- GT2- G+
40
IT / A Tj = 125 C Tj = 25 C
BT138 typ max
30
Vo = 1.175 V Rs = 0.0316 Ohms
20
10
0.5 0 -50
0 0 0.5 1 1.5 VT / V 2 2.5 3
0
50 Tj / C
100
150
Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
IL(Tj) IL(25 C)
Fig.10. Typical and maximum on-state characteristic.
3 2.5 2 1.5 1
TRIAC
10
Zth j-mb (K/W)
BT138
1
unidirectional bidirectional
0.1
P D tp
0.01
0.5 0 .