Document
DPAK
BT136S-600D
4Q Triac
30 September 2013
Product data sheet
1. General description
Planar passivated very sensitive gate four quadrant triac in a SOT428 (DPAK) surface-mountable plastic package intended for use in general purpose bidirectional switching and phase control applications, where high sensitivity is required in all four quadrants. This very sensitive gate "series D" triac is intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.
2. Features and benefits
• Direct triggering from low power drivers and logic ICs • High blocking voltage capability • Low holding current for low current loads and lowest EMI at commutation • Planar passivated for voltage ruggedness and reliability • Surface-mountable package • Triggering in all four quadrants • Very sensitive gate
3. Applications
• General purpose motor control • General purpose switching
4. Quick reference data
Table 1. Quick reference data
Symbol
Parameter
Conditions
VDRM
repetitive peak offstate voltage
ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C;
state current
tp = 20 ms; Fig. 4; Fig. 5
IT(RMS)
RMS on-state current full sine wave; Tmb ≤ 107 °C; Fig. 1; Fig. 2; Fig. 3
Static characteristics
IGT
gate trigger current
VD = 12 V; IT = 0.1 A; T2+ G+;
Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 7
Min Typ Max Unit - - 600 V
- - 25 A
- - 4A
- 2 5 mA
-
2.5 5
mA
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NXP Semiconductors
BT136S-600D
4Q Triac
Symbol
Parameter
IH holding current
Conditions
VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; Fig. 7
VD = 12 V; IT = 0.1 A; T2- G+; Tj = 25 °C; Fig. 7
VD = 12 V; Tj = 25 °C; Fig. 9
Min Typ Max Unit
-
2.5 5
mA
- 5 10 mA
-
1.2 10
mA
5. Pinning information
Table 2. Pinning information Pin Symbol Description
Simplified outline
1 T1 main terminal 1
mb
2 T2 main terminal 2[1]
3 G gate
mb T2
mounting base; connected to main terminal 2
2 13
DPAK (SOT428)
Graphic symbol
T2 sym051
T1 G
[1] it is not possible to make a connection to pin 2 of the SOT428 (DPAK) package
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
BT136S-600D
DPAK
Description
Version
plastic single-ended surface-mounted package (DPAK); 3 leads SOT428 (one lead cropped)
BT136S-600D
Product data sheet
All information provided in this document is subject to legal disclaimers.
30 September 2013
© NXP N.V. 2013. All rights reserved
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NXP Semiconductors
7. Limiting values
Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
VDRM
repetitive peak off-state voltage
IT(RMS)
RMS on-state current
full sine wave; Tmb ≤ 107 °C; Fig. 1; Fig. 2; Fig. 3
ITSM non-repetitive peak on-state full sine wave; Tj(init) = 25 °C;
current
tp = 20 ms; Fig. 4; Fig. 5
full sine wave; Tj(init) = 25 °C; tp = 16.7 ms; Fig. 4; Fig. 5
I2t I2t for fusing
tp = 10 ms; SIN
dIT/dt
rate of rise of on-state current IT = 6 A; IG = 0.2 A; dIG/dt = 0.2 A/µs; T2+ G+
IT = 6 A; IG = 0.2 A; dIG/dt = 0.2 A/µs; T2+ G-
IT = 6 A; IG = 0.2 A; dIG/dt = 0.2 A/µs; T2- G-
IT = 6 A; IG = 0.2 A; dIG/dt = 0.2 A/µs; T2- G+
IGM peak gate current
PGM peak gate power
PG(AV)
average gate power
over any 20 ms period
Tstg storage temperature
Tj junction temperature
BT136S-600D
4Q Triac
Min Max Unit - 600 V - 4A - 25 A - 27 A - 3.1 A2s - 50 A/µs - 50 A/µs - 50 A/µs - 10 A/µs - 2A - 5W - 0.5 W -40 150 °C - 125 °C
BT136S-600D
Product data sheet
All information provided in this document is subject to legal disclaimers.
30 September 2013
© NXP N.V. 2013. All rights reserved
3 / 14
NXP Semiconductors
BT136S-600D
4Q Triac
5 IT(RMS)
(A) 4
3
2
1
003aae828
12 IT(RMS)
(A) 10
8
6
4
2
003aae830
0 - 50
0
50 100 150 Tmb (°C)
0 10- 2
10- 1
1 10 surge duration (s)
Fig. 1. RMS on-state current as a function of mounting base temperature; maximum values
f = 50 Hz Tmb ≤ 107 °C
Fig. 2. RMS on-state current as a function of surge duration; maximum values
8
Ptot (W)
6
conduction angle
(degrees)
30 60 90 120 180
form factor
a
4 2.8 2.2 1.9 1.57
4
α
003aae827
α = 180° 120 ° 90° 60° 30 °
2
0 01234
Fig. 3.
α = conduction angle a = form factor = IT(RMS) / IT(AV)
Total power dissipation as a function of RMS on-state current; maximum values
IT(RMS) (A)
5
BT136S-600D
Product data sheet
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30 September 2013
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NXP Semiconductors
103 ITSM (A)
102
BT136S-600D
4Q Triac
003aae829
IT ITSM t
tp Tj(init) = 25 °C max
(1) (2)
10 10- 5
10- 4
10- 3
10- 2
tp (s)
tp ≤ 20 ms (1) dIT/dt limit (2) T2- G+ quadrant limit
Fig. 4. Non-repetitive peak on-state current as a function of pulse width; maximum values
30 ITSM (A)
25
10- 1
003aae831
20
15
10 IT ITSM
t 5
1/f Tj(init) = 25 °C max 0 .