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BT136S-600D Dataheets PDF



Part Number BT136S-600D
Manufacturers NXP
Logo NXP
Description 4Q Triac
Datasheet BT136S-600D DatasheetBT136S-600D Datasheet (PDF)

DPAK BT136S-600D 4Q Triac 30 September 2013 Product data sheet 1. General description Planar passivated very sensitive gate four quadrant triac in a SOT428 (DPAK) surface-mountable plastic package intended for use in general purpose bidirectional switching and phase control applications, where high sensitivity is required in all four quadrants. This very sensitive gate "series D" triac is intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gat.

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DPAK BT136S-600D 4Q Triac 30 September 2013 Product data sheet 1. General description Planar passivated very sensitive gate four quadrant triac in a SOT428 (DPAK) surface-mountable plastic package intended for use in general purpose bidirectional switching and phase control applications, where high sensitivity is required in all four quadrants. This very sensitive gate "series D" triac is intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. 2. Features and benefits • Direct triggering from low power drivers and logic ICs • High blocking voltage capability • Low holding current for low current loads and lowest EMI at commutation • Planar passivated for voltage ruggedness and reliability • Surface-mountable package • Triggering in all four quadrants • Very sensitive gate 3. Applications • General purpose motor control • General purpose switching 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDRM repetitive peak offstate voltage ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C; state current tp = 20 ms; Fig. 4; Fig. 5 IT(RMS) RMS on-state current full sine wave; Tmb ≤ 107 °C; Fig. 1; Fig. 2; Fig. 3 Static characteristics IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 7 Min Typ Max Unit - - 600 V - - 25 A - - 4A - 2 5 mA - 2.5 5 mA Scan or click this QR code to view the latest information for this product NXP Semiconductors BT136S-600D 4Q Triac Symbol Parameter IH holding current Conditions VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2- G+; Tj = 25 °C; Fig. 7 VD = 12 V; Tj = 25 °C; Fig. 9 Min Typ Max Unit - 2.5 5 mA - 5 10 mA - 1.2 10 mA 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline 1 T1 main terminal 1 mb 2 T2 main terminal 2[1] 3 G gate mb T2 mounting base; connected to main terminal 2 2 13 DPAK (SOT428) Graphic symbol T2 sym051 T1 G [1] it is not possible to make a connection to pin 2 of the SOT428 (DPAK) package 6. Ordering information Table 3. Ordering information Type number Package Name BT136S-600D DPAK Description Version plastic single-ended surface-mounted package (DPAK); 3 leads SOT428 (one lead cropped) BT136S-600D Product data sheet All information provided in this document is subject to legal disclaimers. 30 September 2013 © NXP N.V. 2013. All rights reserved 2 / 14 NXP Semiconductors 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VDRM repetitive peak off-state voltage IT(RMS) RMS on-state current full sine wave; Tmb ≤ 107 °C; Fig. 1; Fig. 2; Fig. 3 ITSM non-repetitive peak on-state full sine wave; Tj(init) = 25 °C; current tp = 20 ms; Fig. 4; Fig. 5 full sine wave; Tj(init) = 25 °C; tp = 16.7 ms; Fig. 4; Fig. 5 I2t I2t for fusing tp = 10 ms; SIN dIT/dt rate of rise of on-state current IT = 6 A; IG = 0.2 A; dIG/dt = 0.2 A/µs; T2+ G+ IT = 6 A; IG = 0.2 A; dIG/dt = 0.2 A/µs; T2+ G- IT = 6 A; IG = 0.2 A; dIG/dt = 0.2 A/µs; T2- G- IT = 6 A; IG = 0.2 A; dIG/dt = 0.2 A/µs; T2- G+ IGM peak gate current PGM peak gate power PG(AV) average gate power over any 20 ms period Tstg storage temperature Tj junction temperature BT136S-600D 4Q Triac Min Max Unit - 600 V - 4A - 25 A - 27 A - 3.1 A2s - 50 A/µs - 50 A/µs - 50 A/µs - 10 A/µs - 2A - 5W - 0.5 W -40 150 °C - 125 °C BT136S-600D Product data sheet All information provided in this document is subject to legal disclaimers. 30 September 2013 © NXP N.V. 2013. All rights reserved 3 / 14 NXP Semiconductors BT136S-600D 4Q Triac 5 IT(RMS) (A) 4 3 2 1 003aae828 12 IT(RMS) (A) 10 8 6 4 2 003aae830 0 - 50 0 50 100 150 Tmb (°C) 0 10- 2 10- 1 1 10 surge duration (s) Fig. 1. RMS on-state current as a function of mounting base temperature; maximum values f = 50 Hz Tmb ≤ 107 °C Fig. 2. RMS on-state current as a function of surge duration; maximum values 8 Ptot (W) 6 conduction angle (degrees) 30 60 90 120 180 form factor a 4 2.8 2.2 1.9 1.57 4 α 003aae827 α = 180° 120 ° 90° 60° 30 ° 2 0 01234 Fig. 3. α = conduction angle a = form factor = IT(RMS) / IT(AV) Total power dissipation as a function of RMS on-state current; maximum values IT(RMS) (A) 5 BT136S-600D Product data sheet All information provided in this document is subject to legal disclaimers. 30 September 2013 © NXP N.V. 2013. All rights reserved 4 / 14 NXP Semiconductors 103 ITSM (A) 102 BT136S-600D 4Q Triac 003aae829 IT ITSM t tp Tj(init) = 25 °C max (1) (2) 10 10- 5 10- 4 10- 3 10- 2 tp (s) tp ≤ 20 ms (1) dIT/dt limit (2) T2- G+ quadrant limit Fig. 4. Non-repetitive peak on-state current as a function of pulse width; maximum values 30 ITSM (A) 25 10- 1 003aae831 20 15 10 IT ITSM t 5 1/f Tj(init) = 25 °C max 0 .


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