Document
Philips Semiconductors
Product specification
Triacs logic level
GENERAL DESCRIPTION
Glass passivated, sensitive gate triacs in a plastic envelope suitable for surface mounting, intended for use in general purpose bidirectional switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits.
BT136S series D
BT136M series D QUICK REFERENCE DATA
SYMBOL VDRM IT(RMS) ITSM PARAMETER BT136S (or BT136M)Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current MAX. MAX. UNIT 500D 500 4 25 600D 600 4 25 V A A
PINNING - SOT428
PIN Standard Alternative NUMBER S M 1 2 3 tab MT1 MT2 gate MT2 gate MT2 MT1 MT2
PIN CONFIGURATION
tab
SYMBOL
T2
T1
2 1 3
G
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VDRM IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current I2t for fusing Repetitive rate of rise of on-state current after triggering full sine wave; Tmb ≤ 107 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 6 A; IG = 0.2 A; dIG/dt = 0.2 A/µs T2+ G+ T2+ GT2- GT2- G+ CONDITIONS MIN. -40 -500 5001 4 25 27 3.1 50 50 50 10 2 5 5 0.5 150 125 MAX. -600 6001 UNIT V A A A A2s A/µs A/µs A/µs A/µs A V W W ˚C ˚C
I2t dIT/dt
IGM VGM PGM PG(AV) Tstg Tj
Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature
over any 20 ms period
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 3 A/µs. July 1997 1 Rev 1.000
Philips Semiconductors
Product specification
Triacs logic level
THERMAL RESISTANCES
SYMBOL Rth j-mb Rth j-a PARAMETER CONDITIONS MIN. -
BT136S series D
BT136M series D
TYP. 75
MAX. 3.0 3.7 -
UNIT K/W K/W K/W
Thermal resistance full cycle junction to mounting base half cycle Thermal resistance pcb (FR4) mounted; footprint as in Fig.14 junction to ambient
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated SYMBOL IGT PARAMETER Gate trigger current CONDITIONS VD = 12 V; IT = 0.1 A T2+ G+ T2+ GT2- GT2- G+ T2+ G+ T2+ GT2- GT2- G+ MIN. 0.25 TYP. 2.0 2.5 2.5 5.0 1.6 4.5 1.2 2.2 1.2 1.4 0.7 0.4 0.1 MAX. 5 5 5 10 10 15 10 15 10 1.70 1.5 0.5 UNIT mA mA mA mA mA mA mA mA mA V V V mA
IL
Latching current
VD = 12 V; IGT = 0.1 A
IH VT VGT ID
Holding current On-state voltage Gate trigger voltage Off-state leakage current
VD = 12 V; IGT = 0.1 A IT = 5 A VD = 12 V; IT = 0.1 A VD = 400 V; IT = 0.1 A; Tj = 125 ˚C VD = VDRM(max); Tj = 125 ˚C
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated SYMBOL dVD/dt tgt PARAMETER Critical rate of rise of off-state voltage Gate controlled turn-on time CONDITIONS VDM = 67% VDRM(max); Tj = 125 ˚C; exponential waveform; RGK = 1 kΩ ITM = 6 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/µs MIN. TYP. 5 2 MAX. UNIT V/µs µs
July 1997
2
Rev 1.000
Philips Semiconductors
Product specification
Triacs logic level
BT136S series D
BT136M series D
8 7 6 5 4 3 2 1 0
Ptot / W
BT136
Tmb(max) / C
101 104
5
IT(RMS) / A
BT136
1
= 180 120 90 60 30
4
107 110 113 116 119
107 C
3
2
1
122 0 1 2 3 IT(RMS) / A 4 125 5
0 -50
0
50 Tmb / C
100
150
Fig.1. Maximum on-state dissipation, Ptot, versus rms on-state current, IT(RMS), where α = conduction angle.
Fig.4. Maximum permissible rms current IT(RMS) , versus mounting base temperature Tmb.
BT136
1000
ITSM / A
BT136 IT T ITSM
12 10
time
IT(RMS) / A
Tj initial = 25 C max 100 dIT /dt limit
8 6 4
T2- G+ quadrant
2
10 10us
100us
1ms T/s
10ms
100ms
0 0.01
0.1 1 surge duration / s
10
Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp ≤ 20ms.
Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Tmb ≤ 107˚C.
VGT(Tj) VGT(25 C)
30 25 20 15 10 5 0
ITSM / A
BT136
1.6
IT T I TSM time
BT136
1.4 1.2 1 0.8 0.6 0.4 -50
Tj initial = 25 C max
1
10 100 Number of cycles at 50Hz
1000
0
50 Tj / C
100
150
Fig.3. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz.
Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25˚C), versus junction temperature Tj.
July 1997
3
Rev 1.000
Philips Semiconductors
Product specification
Triacs logic level
BT136S series D
BT136M series D
3 2.5 2 1.5 1 0.5
IGT(Tj) IGT(25 C)
BT136D T2+ G+ T2+ GT2- GT2- G+
12 10
IT / A Tj = 125 C Tj = 25 C
Vo = 1.27 V Rs = 0.091 ohms
BT136 typ max
8 6 4 2 0
0 -50
0
50 Tj / C
100
150
0
0.5
1
1.5 VT / V
2
2.5
3
Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25˚C), versus junction temperature Tj.
IL(Tj) IL(25 C)
Fig.10. Typical and max.