DatasheetsPDF.com

BT136M-500D Dataheets PDF



Part Number BT136M-500D
Manufacturers NXP
Logo NXP
Description Triacs logic level
Datasheet BT136M-500D DatasheetBT136M-500D Datasheet (PDF)

Philips Semiconductors Product specification Triacs logic level GENERAL DESCRIPTION Glass passivated, sensitive gate triacs in a plastic envelope suitable for surface mounting, intended for use in general purpose bidirectional switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. BT136S series D BT136M series D QUICK REFERENCE DATA SYMBOL VDRM IT(RMS) ITSM PARAMET.

  BT136M-500D   BT136M-500D



Document
Philips Semiconductors Product specification Triacs logic level GENERAL DESCRIPTION Glass passivated, sensitive gate triacs in a plastic envelope suitable for surface mounting, intended for use in general purpose bidirectional switching and phase control applications. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. BT136S series D BT136M series D QUICK REFERENCE DATA SYMBOL VDRM IT(RMS) ITSM PARAMETER BT136S (or BT136M)Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current MAX. MAX. UNIT 500D 500 4 25 600D 600 4 25 V A A PINNING - SOT428 PIN Standard Alternative NUMBER S M 1 2 3 tab MT1 MT2 gate MT2 gate MT2 MT1 MT2 PIN CONFIGURATION tab SYMBOL T2 T1 2 1 3 G LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VDRM IT(RMS) ITSM PARAMETER Repetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current I2t for fusing Repetitive rate of rise of on-state current after triggering full sine wave; Tmb ≤ 107 ˚C full sine wave; Tj = 25 ˚C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 6 A; IG = 0.2 A; dIG/dt = 0.2 A/µs T2+ G+ T2+ GT2- GT2- G+ CONDITIONS MIN. -40 -500 5001 4 25 27 3.1 50 50 50 10 2 5 5 0.5 150 125 MAX. -600 6001 UNIT V A A A A2s A/µs A/µs A/µs A/µs A V W W ˚C ˚C I2t dIT/dt IGM VGM PGM PG(AV) Tstg Tj Peak gate current Peak gate voltage Peak gate power Average gate power Storage temperature Operating junction temperature over any 20 ms period 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 3 A/µs. July 1997 1 Rev 1.000 Philips Semiconductors Product specification Triacs logic level THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER CONDITIONS MIN. - BT136S series D BT136M series D TYP. 75 MAX. 3.0 3.7 - UNIT K/W K/W K/W Thermal resistance full cycle junction to mounting base half cycle Thermal resistance pcb (FR4) mounted; footprint as in Fig.14 junction to ambient STATIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL IGT PARAMETER Gate trigger current CONDITIONS VD = 12 V; IT = 0.1 A T2+ G+ T2+ GT2- GT2- G+ T2+ G+ T2+ GT2- GT2- G+ MIN. 0.25 TYP. 2.0 2.5 2.5 5.0 1.6 4.5 1.2 2.2 1.2 1.4 0.7 0.4 0.1 MAX. 5 5 5 10 10 15 10 15 10 1.70 1.5 0.5 UNIT mA mA mA mA mA mA mA mA mA V V V mA IL Latching current VD = 12 V; IGT = 0.1 A IH VT VGT ID Holding current On-state voltage Gate trigger voltage Off-state leakage current VD = 12 V; IGT = 0.1 A IT = 5 A VD = 12 V; IT = 0.1 A VD = 400 V; IT = 0.1 A; Tj = 125 ˚C VD = VDRM(max); Tj = 125 ˚C DYNAMIC CHARACTERISTICS Tj = 25 ˚C unless otherwise stated SYMBOL dVD/dt tgt PARAMETER Critical rate of rise of off-state voltage Gate controlled turn-on time CONDITIONS VDM = 67% VDRM(max); Tj = 125 ˚C; exponential waveform; RGK = 1 kΩ ITM = 6 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/µs MIN. TYP. 5 2 MAX. UNIT V/µs µs July 1997 2 Rev 1.000 Philips Semiconductors Product specification Triacs logic level BT136S series D BT136M series D 8 7 6 5 4 3 2 1 0 Ptot / W BT136 Tmb(max) / C 101 104 5 IT(RMS) / A BT136 1 = 180 120 90 60 30 4 107 110 113 116 119 107 C 3 2 1 122 0 1 2 3 IT(RMS) / A 4 125 5 0 -50 0 50 Tmb / C 100 150 Fig.1. Maximum on-state dissipation, Ptot, versus rms on-state current, IT(RMS), where α = conduction angle. Fig.4. Maximum permissible rms current IT(RMS) , versus mounting base temperature Tmb. BT136 1000 ITSM / A BT136 IT T ITSM 12 10 time IT(RMS) / A Tj initial = 25 C max 100 dIT /dt limit 8 6 4 T2- G+ quadrant 2 10 10us 100us 1ms T/s 10ms 100ms 0 0.01 0.1 1 surge duration / s 10 Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp ≤ 20ms. Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Tmb ≤ 107˚C. VGT(Tj) VGT(25 C) 30 25 20 15 10 5 0 ITSM / A BT136 1.6 IT T I TSM time BT136 1.4 1.2 1 0.8 0.6 0.4 -50 Tj initial = 25 C max 1 10 100 Number of cycles at 50Hz 1000 0 50 Tj / C 100 150 Fig.3. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz. Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25˚C), versus junction temperature Tj. July 1997 3 Rev 1.000 Philips Semiconductors Product specification Triacs logic level BT136S series D BT136M series D 3 2.5 2 1.5 1 0.5 IGT(Tj) IGT(25 C) BT136D T2+ G+ T2+ GT2- GT2- G+ 12 10 IT / A Tj = 125 C Tj = 25 C Vo = 1.27 V Rs = 0.091 ohms BT136 typ max 8 6 4 2 0 0 -50 0 50 Tj / C 100 150 0 0.5 1 1.5 VT / V 2 2.5 3 Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25˚C), versus junction temperature Tj. IL(Tj) IL(25 C) Fig.10. Typical and max.


BT136M-500 BT136M-500D BT136M-500E


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)