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BT134-600D Dataheets PDF



Part Number BT134-600D
Manufacturers NXP
Logo NXP
Description 4Q Triac
Datasheet BT134-600D DatasheetBT134-600D Datasheet (PDF)

TO-220AB BT134-600D 4Q Triac 21 November 2013 Product data sheet 1. General description Planar passivated very sensitive gate four quadrant triac in a SOT82 plastic package intended for use in general purpose bidirectional switching and phase control applications where high sensitivity is required in all four quadrants. This "series D" triac is intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. 2. Features and benefits.

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TO-220AB BT134-600D 4Q Triac 21 November 2013 Product data sheet 1. General description Planar passivated very sensitive gate four quadrant triac in a SOT82 plastic package intended for use in general purpose bidirectional switching and phase control applications where high sensitivity is required in all four quadrants. This "series D" triac is intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. 2. Features and benefits • Compact package • Direct interfacing to logic level ICs • Direct interfacing to low power gate drive circuits • High blocking voltage capability • Low holding current for low current loads and lowest EMI at commutation • Planar passivated for voltage ruggedness and reliability • Triggering in all four quadrants • Very sensitive gate 3. Applications • General purpose low power motor control • Home appliances • Industrial process control 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDRM repetitive peak offstate voltage ITSM non-repetitive peak on- full sine wave; Tj(init) = 25 °C; state current tp = 20 ms; Fig. 4; Fig. 5 IT(RMS) RMS on-state current full sine wave; Tmb ≤ 107 °C; Fig. 1; Fig. 2; Fig. 3 Static characteristics IGT gate trigger current VD = 12 V; IT = 0.1 A; T2+ G+; Tj = 25 °C; Fig. 7 Min Typ Max Unit - - 600 V - - 25 A - - 4A - 2 5 mA Scan or click this QR code to view the latest information for this product NXP Semiconductors BT134-600D 4Q Triac Symbol Parameter IH holding current Conditions VD = 12 V; IT = 0.1 A; T2+ G-; Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2- G-; Tj = 25 °C; Fig. 7 VD = 12 V; IT = 0.1 A; T2- G+; Tj = 25 °C; Fig. 7 VD = 12 V; Tj = 25 °C; Fig. 9 Min Typ Max Unit - 2.5 5 mA - 2.5 5 mA - 5 10 mA - 1.2 10 mA 5. Pinning information Table 2. Pinning information Pin Symbol Description 1 T1 main terminal 1 2 T2 main terminal 2 3 G gate mb T2 mounting base; main terminal 2 Simplified outline Graphic symbol T2 sym051 T1 G 123 SIP3 (SOT82) 6. Ordering information Table 3. Ordering information Type number Package Name BT134-600D SIP3 Description plastic single-ended package; 3 leads (in-line) Version SOT82 BT134-600D Product data sheet All information provided in this document is subject to legal disclaimers. 21 November 2013 © NXP N.V. 2013. All rights reserved 2 / 13 NXP Semiconductors 7. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions VDRM repetitive peak off-state voltage IT(RMS) RMS on-state current full sine wave; Tmb ≤ 107 °C; Fig. 1; Fig. 2; Fig. 3 ITSM non-repetitive peak on-state full sine wave; Tj(init) = 25 °C; current tp = 20 ms; Fig. 4; Fig. 5 full sine wave; Tj(init) = 25 °C; tp = 16.7 ms I2t I2t for fusing tp = 10 ms; SIN dIT/dt rate of rise of on-state current IT = 6 A; IG = 0.2 A; dIG/dt = 0.2 A/µs; T2+ G+ IT = 6 A; IG = 0.2 A; dIG/dt = 0.2 A/µs; T2+ G- IT = 6 A; IG = 0.2 A; dIG/dt = 0.2 A/µs; T2- G- IT = 6 A; IG = 0.2 A; dIG/dt = 0.2 A/µs; T2- G+ IGM peak gate current PGM peak gate power PG(AV) average gate power over any 20 ms period Tstg storage temperature Tj junction temperature BT134-600D 4Q Triac Min Max Unit - 600 V - 4A - 25 A - 27 A - 3.1 A2s - 50 A/µs - 50 A/µs - 50 A/µs - 10 A/µs - 2A - 5W - 0.5 W -40 150 °C - 125 °C BT134-600D Product data sheet All information provided in this document is subject to legal disclaimers. 21 November 2013 © NXP N.V. 2013. All rights reserved 3 / 13 NXP Semiconductors BT134-600D 4Q Triac 5 IT(RMS) (A) 4 3 2 1 003aae828 12 IT(RMS) (A) 10 8 6 4 2 0 0 3 aae8 3 0 0 - 50 0 50 100 150 Tmb (°C) 0 10-2 10-1 1 10 surge duration(s) Fig. 1. RMS on-state current as a function of mounting base temperature; maximum values f = 50 Hz Tmb ≤ 107 °C Fig. 2. RMS on-state current as a function of surge duration; maximum values 8 Pt o t (W) 6 conduction form angle factor (degrees) a 30 4 60 2.8 90 2.2 120 1.9 180 1.57 4 # 0 0 3 aae8 2 7 # = 180° 1 2 0° 90 ° 60 ° 30° 2 0 01234 Fig. 3. α = conduction angle a = form factor = IT(RMS) / IT(AV) Total power dissipation as a function of RMS on-state current; maximum values IT(RMS) (A) 5 BT134-600D Product data sheet All information provided in this document is subject to legal disclaimers. 21 November 2013 © NXP N.V. 2013. All rights reserved 4 / 13 NXP Semiconductors BT134-600D 4Q Triac 30 ITSM (A) 25 0 0 3 aae8 3 1 20 15 10 IT ITSM t 5 1/ f Tj(init)= 25 °C m ax 0 1 10 102 103 104 number of cycles f = 50 Hz Fig. 4. Non-repetitive peak on-state current as a function of the number of sinusoidal current cycles; maximum values 103 003aae829 IT ITSM ITSM (A) 102 t tp Tj(init)= 25 °C m ax (1 ) (2 ) 10 10-5 10-4 10-3 10-2 tp (s) tp ≤ 20 ms (1) dIT/dt limit (2) T2- G+ quadrant limit Fig. 5. Non-repetitive peak on-state current as a function of pulse width;.


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