DISCRETE SEMICONDUCTORS
DATA SHEET
BST82 N-channel enhancement mode vertical D-MOS transistor
Product specification Fil...
DISCRETE SEMICONDUCTORS
DATA SHEET
BST82 N-channel enhancement mode vertical D-MOS
transistor
Product specification File under Discrete Semiconductors, SC13b April 1995
Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS
transistor
DESCRIPTION N-channel enhancement mode vertical D-MOS
transistor in SOT23 envelope and designed for use as Surface Mounted Device (SMD) in thin and thick-film circuits for telephone ringer and for application with relay, high-speed and line-transformer drivers. FEATURES Direct interface to C-MOS, TTL, etc. High-speed switching No second breakdown Low RDS(on) Transfer admittance ID = 175 mA; VDS = 5 V PINNING - SOT23 1 2 3 PIN CONFIGURATION = gate = source = drain Yfs typ. QUICK REFERENCE DATA Drain-source voltage Drain-source voltage (non-repetitive peak; tp ≤ 2 ms) Gate-source voltage (open drain) Drain current (DC) Total power dissipation up to Tamb = 25 °C Drain-source ON-resistance ID = 150 mA; VGS = 5 V RDS(on) typ. max. VDS VDS(SM) ±VGSO ID Ptot max. max. max. max. max.
BST82
80 V 100 V 20 V 175 mA 300 mW 7 Ω 10 Ω
150 mS
handbook, halfpage
3
handbook, 2 columns
d
g
1 Top view 2
MSB003 MBB076 - 1
s
Marking: 02p
Fig.1 Simplified outline and symbol.
April 1995
2
Philips Semiconductors
Product specification
N-channel enhancement mode vertical D-MOS
transistor
RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage Drain-source voltage (no...