BST70A

DISCRETE SEMICONDUCTORS DATA SHEET BST70A N-channel vertical D-MOS transistor Product specification File under Discrete Semiconductors, SC13b April 1995 Philips Semiconductors Product specification N-channel vertical D-MOS transistor DESCRIPTION N-channel enhancement mode vertical D-MOS transistor in TO-92 variant envelope and intended for use in relay, high-speed and line-transformer drivers. FEATURES: Very low RDS(on) Direct interface to C-MOS, TTL, etc. High-speed switching No second breakdown PINNING - TO-92 VARIANT 1 = source 2 = gate 3 = drain QUICK REFERENCE DATA Drain-source voltage Gate-source voltage (open drain) Drain current (DC) Total power dissipation up to Tamb = 25 °C Drain-source ON-resistance ID = 500 mA; VGS = 10 V Transfer admittance ID = 500 mA; VDS = 15 V  Yfs  typ. RDS(on) VDS VGSO ID Ptot BST70A max. max. max. max. typ. max. 80 V 20 V 0.5 A 1 W 2 Ω 4 Ω 300 mS PIN CONFIGURATION handbook, halfpage d 1 2 3 g MAM146 s Note: Various pinout configurations available. Fig.1 Simplified outline and symbol. April 1995 2 Philips Semiconductors Product specification N-channel vertical D-MOS transistor RATINGS Limiting values in accordance with the Absolute Maximum System (IEC 134) Drain-source voltage Gate-source voltage (open drain) Drain current (DC) Drain current (peak) Total power dissipation up to Tamb = 25 °C (note 1) Storage temperature range Junction temperature THERMAL RESISTANCE From junction to ambient (note 1) Note 1. Transi...