BST39

DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 BST39; BST40 NPN high-voltage transistors Product specification Supersedes data of 1997 May 22 1999 Apr 26 Philips Semiconductors Product specification NPN high-voltage transistors FEATURES Low current (max. 100 mA) High voltage (max. 350 V). APPLICATIONS General purpose switching and amplification. DESCRIPTION NPN high-voltage transistor in a SOT89 plastic package. PNP complements: BST15 and BST16. MARKING TYPE NUMBER BST39 BST40 MARKING CODE AT1 AT2 1 Bottom view 2 3 handbook, halfpage BST39; BST40 PINNING PIN 1 2 3 emitter collector base DESCRIPTION 2 3 1 MAM296 Fig.1 Simplified outline (SOT89) and symbol. LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BST39 BST40 VCEO collector-emitter voltage BST39 BST40 VEBO IC ICM IBM Ptot Tstg Tj Tamb Note 1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 6 cm2. For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”. emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tamb ≤ 25 °C; note 1 open collector open base − − − − − − − −65 − −65 350 250 5 100 200 100 1.3 +150 150 +150 V V V mA mA mA W °C °C °C PARAMETER collector-base voltage CONDITIONS open emitter − − 400 300 V V MIN. MAX....