BSS84

BSS84 — P-Channel Enhancement Mode Field-Effect Transistor February 2013 BSS84 P-Channel Enhancement Mode Field-Effect Transistor Features  -0.13 A, -50 V, RDS(ON) = 10 Ω at VGS = -5 V  Voltage-Controlled P-Channel Small-Signal Switch  High-Density Cell Design for Low RDS(ON)  High Saturation Current D D S SOT-23 G G Absolute Maximum Ratings S Description This P-channel enhancement-mode field-effect transistor is produced using Fairchild’s proprietary, high cell density, DMOS technology. This very high density process minimizes on-state resistance and to provide rugged and reliable performance and fast switching. The BSS84 can be used, with a minimum of effort, in most applications requiring up to 0.13 A DC and can deliver current up to 0.52 A. This product is particularly suited to low-voltage applications requiring a low-current high-side switch. Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at TA = 25°C unless otherwise noted. Symbol VDSS VGSS ID PD TJ, TSTG TL Parameter Drain-Source Voltage Gate-Source Voltage Drain Current(1) Maximum Power Dissipation(1) Continuous Pulsed Derate Above 25°C Operat...