BSS80, BSS82
PNP Silicon Switching Transistors
High DC current gain: 0.1mA to 500 mA Low collector-emitter saturatio...
BSS80, BSS82
PNP Silicon Switching
Transistors
High DC current gain: 0.1mA to 500 mA Low collector-emitter saturation voltage Complementary types: BSS79, BSS81 (
NPN)
3
2 1
VPS05161
Type BSS80B BSS80C BSS82B BSS82C
Marking CHs CJs CLs CMs 1=B 1=B 1=B 1=B
Pin Configuration 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C
Package SOT23 SOT23 SOT23 SOT23
Maximum Ratings Parameter Collector-emitter voltage
Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 77 °C Junction temperature Storage temperature
Symbol VCEO
VCBO VEBO IC ICM IB IBM Ptot Tj Tstg
BSS80 40
60 5 800 1 100 200 330 150
BSS82 60
Unit V
V mA A mA mW °C
-65 ... 150
Thermal Resistance Junction - soldering point 1) RthJS
220
K/W
1For calculation of R thJA please refer to Application Note Thermal Resistance
1
Nov-30-2001
BSS80, BSS82
Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 50 V, IE = 0 Collector cutoff current VCB = 50 V, IE = 0 , TA = 150 °C Emitter cutoff current VEB = 3 V, IC = 0 DC current gain 1) IC = 100 µA, VCE = 10 V IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 150 mA, VCE = 10 V IC = 500 mA, VCE = 10 V hFE IEBO ICBO ICBO V(BR)EBO V(BR)CEO ty...