PNP Silicon Switching Transistors (High DC current gain Low collector-emitter saturation voltage)
PNP Silicon Switching Transistors
BSS 80 BSS 82
High DC current gain q Low collector-emitter saturation voltage q Comp...
PNP Silicon Switching
Transistors
BSS 80 BSS 82
High DC current gain q Low collector-emitter saturation voltage q Complementary types: BSS 79, BSS 81 (
NPN)
q
Type BSS 80 B BSS 80 C BSS 82 B BSS 82 C
Marking CHs CJs CLs CMs
Ordering Code (tape and reel) Q62702-S557 Q62702-S492 Q62702-S560 Q62702-S482
Pin Configuration 1 2 3 B E C
Package1) SOT-23
Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TS = 77 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point
1) 2)
Symbol VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg
Values BSS 82 BSS 80 40 5 800 1 100 200 330 150 – 65 … + 150 60 60
Unit V
mA A mA mW ˚C
Rth JA Rth JS
≤ ≤
290 220
K/W
For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu.
Semiconductor Group
1
5.91
BSS 80 BSS 82
Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BSS 80 BSS 82 Collector-base breakdown voltage IC = 10 µA Emitter-base breakdown voltage IE = 10 µA Collector-base cutoff current VCB = 50 V VCB = 50 V, TA = 150 ˚C Emitter-base cutoff current VEB = 3 V DC current gain IC = 100 µA, VCE = 10 V IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V1) IC = 150 mA, VCE = 10 V1) IC = 50...
