BSS79C

BSS79, BSS81 NPN Silicon Switching Transistors
High DC current gain: 0.1mA to 500 mA
Low collector-emitter saturation voltage
Complementary types: BSS80, BSS82 (PNP) 3 2 1 VPS05161 Type BSS79B BSS79C BSS81B BSS81C Marking CEs CFs CDs CGs 1=B 1=B 1=B 1=B Pin Configuration 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C Package SOT23 SOT23 SOT23 SOT23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 77 °C Junction temperature Storage temperature Symbol VCEO VCBO VEBO IC ICM IB IBM Ptot Tj Tstg BSS79 40 75 6 800 1 100 200 330 150 BSS81 35 Unit V V mA A mA mW °C -65 ... 150 Thermal Resistance Junction - soldering point 1) RthJS
220 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Nov-30-2001 BSS79, BSS81 Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter Symbol Values min. DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 60 V, IE = 0 Collector cutoff current VCB = 60 V, IE = 0 , TA = 150 °C Emitter cutoff current VEB = 3 V, IC = 0 DC current gain 1) IC = 100 µA, VCE = 10 V IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 150 mA, VCE = 10 V IC = 500 mA, VCE = 10 V hFE IEBO ICBO ICBO V(BR)EBO V(BR)CEO ty...