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BSS69R Dataheets PDF



Part Number BSS69R
Manufacturers ETC
Logo ETC
Description SOT23 PNP SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS
Datasheet BSS69R DatasheetBSS69R Datasheet (PDF)

SOT23 PNP SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS ISSUE 2 – SEPTEMBER 1995 7 PARTMARKING DETAILS — BSS69 BSS70 BSS69R BSS70R L2 L3 L6 L7 SYMBOL VCBO VCEO VEBO ICM IC IB PTOT t j:tstg MIN. -40 -40 -5 -50 -0.25 -0.40 -0.65 30 40 50 30 15 60 80 100 60 30 200 250 4.5 10 Typ. 5 35 225 70 -0.85 -0.95 BSS69 BSS70 C B VALUE -40 -40 -5 -200 -100 -50 330 -55 to +150 UNIT V V V mA mA mA mW °C E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Vol.

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SOT23 PNP SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS ISSUE 2 – SEPTEMBER 1995 7 PARTMARKING DETAILS — BSS69 BSS70 BSS69R BSS70R L2 L3 L6 L7 SYMBOL VCBO VCEO VEBO ICM IC IB PTOT t j:tstg MIN. -40 -40 -5 -50 -0.25 -0.40 -0.65 30 40 50 30 15 60 80 100 60 30 200 250 4.5 10 Typ. 5 35 225 70 -0.85 -0.95 BSS69 BSS70 C B VALUE -40 -40 -5 -200 -100 -50 330 -55 to +150 UNIT V V V mA mA mA mW °C E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER SYMBOL V(BR)CBO V(BR)EBO ICES VCE(sat) VBE(sat) hFE ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). Collector-Emitter Breakdown Voltage V(BR)CEO Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector- Emitter Cut-off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Static Forward Current Transfer Ratio BSS69 MAX. UNIT V V V nA V V V V CONDITIONS. IC=-1mA IC=-10µA IE=-10µA VCES=-30V IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA* IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA* IC=-100µA, IC=-1mA, IC=-10mA, VCE=-1V IC=-50mA*, IC=-100mA*, IC=-100µA, IC=-1mA, IC=-10mA, VCE=-1V IC=-50mA*, IC=-100mA*, 150 Static Forward Current Transfer Ratio BSS70 hFE 300 Transition Frequency Collector-Base Capacitance Emitter-Base Capacitance Noise Figure BSS69 BSS70 fT Cobo Cibo N td; tf ts tf MHz MHz pF pF dB ns ns ns IC=-10mA, VCE=-20V f=100MHz VCB=-5V, f=100kHz VEB=-0.5V, f=100kHz IC=-100µΑ, VCE=-5V RS=1kΩ, f=10Hz to15.7 kHz VCC=-3V, IC=-10mA IB1= IB2 =-1mA Switching times: Delay; Rise Storage Time Fall Time *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% PAGE NUMBER .


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