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BSS67R Dataheets PDF



Part Number BSS67R
Manufacturers ETC
Logo ETC
Description SOT23 NPN SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS
Datasheet BSS67R DatasheetBSS67R Datasheet (PDF)

SOT23 NPN SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS ISSUE 2 – SEPTEMBER 1995 7 PARTMARKING DETAILS — BSS66 BSS67 BSS66R BSS67R M6 M7 M8 M9 SYMBOL VCBO VCEO VEBO ICM IC IB PTOT t j:tstg MIN. 40 60 6 50 0.20 0.30 0.65 20 35 50 30 15 40 70 100 60 30 250 300 4 8 Typ. 6 35 200 50 0.85 0.95 BSS66 BSS67 C B VALUE 60 40 6 200 100 50 330 -55 to +150 UNIT V V V mA mA mA mW °C E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Cu.

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SOT23 NPN SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS ISSUE 2 – SEPTEMBER 1995 7 PARTMARKING DETAILS — BSS66 BSS67 BSS66R BSS67R M6 M7 M8 M9 SYMBOL VCBO VCEO VEBO ICM IC IB PTOT t j:tstg MIN. 40 60 6 50 0.20 0.30 0.65 20 35 50 30 15 40 70 100 60 30 250 300 4 8 Typ. 6 35 200 50 0.85 0.95 BSS66 BSS67 C B VALUE 60 40 6 200 100 50 330 -55 to +150 UNIT V V V mA mA mA mW °C E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Base Current Power Dissipation at Tamb=25°C Operating and Storage Temperature Range PARAMETER SYMBOL V(BR)CBO V(BR)EBO ICES VCE(sat) VBE(sat) hFE ELECTRICAL CHARACTERISTICS (at Tamb = 25°C). Collector-Emitter Breakdown Voltage V(BR)CEO Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector- Emitter Cut-off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Static Forward Current Transfer Ratio BSS66 MAX. UNIT V V V nA V V V V CONDITIONS. IC=1mA IC=10µA IE=10µA VCES=30V IC=10mA, IB=1mA IC=50mA, IB=5mA* IC=10mA, IB=1mA IC=50mA, IB=5mA* IC=100µA, IC=1mA, IC=10mA, VCE=1V IC=50mA*, IC=100mA*, IC=100µA, IC=1mA, IC=10mA, VCE=1V IC=50mA*, IC=100mA*, 150 Static Forward Current Transfer Ratio BSS67 hFE 300 Transition Frequency Collector-Base Capacitance Emitter-Base Capacitance Noise Figure BSS66 BSS67 fT Cobo Cibo N td; tf ts tf MHz MHz pF pF dB ns ns ns IC=10mA, VCE=20V f=100MHz VCB=5V, f=100kHz VEB=0.5V, f=100kHz IC=100µA, VCE=5V RS=1kΩ, f=10Hz to15.7 kHz VCC=3V, IC=10mA IB1= IB2 =1mA Switching times: Delay; Rise Storage Time Fall Time * Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2% PAGE NUMBER .


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