BSS64LT1

ON Semiconductort Driver Transistor NPN Silicon BSS64LT1 MAXIMUM RATINGS Rating Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR–5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance Junction to Ambient Junction and Storage Temperature DEVICE MARKING BSS64LT1 = AM Symbol VCEO VCBO VEBO IC Value 80 120 5.0 100 Symbol PD RqJA PD RqJA TJ, Tstg Max 225 1.8 556 300 2.4 417 –55 to +150 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (IC = 4.0 mAdc) Collector–Base Breakdown Voltage (IC = 100 mAdc) Emitter–Base Breakdown Voltage (IE = 100 mAdc) Collector Cutoff Current (VCE = 90 Vdc) (TA = 150°C) Emitter Cutoff Current (VEB = 4.0 Vdc) 1. FR–5 =...