BSS64

BCX 41 BSS 64 NPN Silicon AF and Switching Transistor High breakdown voltage q Low collector-emitter saturation voltage q Complementary types: BCX 42, BSS 63 (PNP) q BCX 41 BSS 64 Type BCX 41 BSS 64 Marking EKs AMs Ordering Code (tape and reel) Q62702-C1659 Q62702-S535 Pin Configuration 1 2 3 B E C Package1) SOT-23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Peak collector current Base current Peak base current Total power dissipation, TS = 79 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient 2) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol VCE0 VCB0 VEB0 IC ICM IB IBM Ptot Tj Tstg 80 120 5 Values BSS 64 BCX 41 125 125 5 800 1 100 200 330 150 – 65 … + 150 Unit V mA A mA mW ˚C 285 215 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 1 5.91 BCX 41 BSS 64 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Values Parameter Symbol min. DC characteristics Collector-emitter breakdown voltage IC = 10 mA Collector-base breakdown voltage1) IC = 100 µA Emitter-base breakdown voltage IE = 10 µA Collector cutoff current VCB = 80 V VCB = 100 V VCB = 80 V, TA = 150 ˚C VCB = 100 V, TA = 150 ˚C Collector cutoff current VCE = 100 V TA = 85 ˚C TA = 125 ˚C Emitter cutoff current VEB = 4 V DC current gain1) IC = 100 µA, VCE = 1 V IC = 1 mA, VCE = 1 V...